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    TRANSISTOR MARKING CODE WTS Search Results

    TRANSISTOR MARKING CODE WTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE WTS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


    Original     		OT-323 Nov-26-1996 transistor marking code wts PDF

    transistor marking code wts

    Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
    Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339 PDF

    transistor marking code wts

    Abstract: transistor marking code wts 15
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15 PDF

    transistor marking code wts

    Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8 PDF

    transistor marking code wts

    Abstract: Marking W1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s PDF

    transistor digital 47k 22k PNP NPN

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor digital 47k 22k PNP NPN PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor marking code wts PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN OT-363 EHA07176 EHA07193 PDF

    infineon marking W1s

    Abstract: transistor marking code wts BCR108S BCR48PN marking code w1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN OT-363 EHA07176 EHA07193 infineon marking W1s transistor marking code wts BCR108S BCR48PN marking code w1s PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		BCR166. BCR166 BCR166W EHA07183 dissipationBCR166, BCR166W, OT323 transistor marking code wts PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		BCR166. BCR166 BCR166W EHA07183 OT323 PDF

    transistor marking code wts

    Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W


    Original     		BCR166. BCR166/F BCR166W EHA07183 BCR166 BCR166F OT323 transistor marking code wts BCR108W BCR166 BCR166F BCR166W BCW66 bcr1 PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


    Original     		BCR48PN VPS05604 EHA07193 OT-363 EHA07176 OT363 transistor marking code wts PDF

    transistor marking code wts

    Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
    Text: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ


    Original     		Q62702-C2496 OT-363 Dec-09-1996 transistor marking code wts pnp array tansistor npn transistor bc icbo nA npn Tansistor BC PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary


    Original     		HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) HY27xSxx121mTxB 256Mb PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003


    Original     		HY27UA HY27SA 128Mx8bit 64Mx16bit) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003


    Original     		HY27UA HY27SA 128Mx8bit 64Mx16bit) HY27xAxx121mTxB PDF

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor PDF

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s PDF

    1207A

    Abstract: No abstract text available
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		OT-363 Q62702-C2495 PDF

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575 PDF

    IC 7481 pin configuration

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction


    OCR Scan     		16/SCLK^ KI-9711 GD37fi7fi IC 7481 pin configuration PDF