TRANSISTOR MARKING CODE WTS Search Results
TRANSISTOR MARKING CODE WTS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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| LM395T/NOPB |
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Ultra Reliable Power Transistor 3-TO-220 0 to 125 |
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| ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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| ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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| LP395Z/NOPB |
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Ultra Reliable Power Transistor 3-TO-92 -40 to 125 |
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TRANSISTOR MARKING CODE WTS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor marking code wts
Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
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OCR Scan |
47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor | |
MARKING CODE T7s
Abstract: MARKINGCODET7s
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OCR Scan |
47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s | |
transistor marking code wtsContextual Info: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323 |
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OT-323 Nov-26-1996 transistor marking code wts | |
1207AContextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings |
OCR Scan |
Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A | |
transistor marking code wts
Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
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Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339 | |
transistor marking code wts
Abstract: transistor marking code wts 15
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BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15 | |
transistor marking code wts
Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
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BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8 | |
transistor marking code wts
Abstract: Marking W1s
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BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s | |
transistor digital 47k 22k PNP NPNContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
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BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor digital 47k 22k PNP NPN | |
transistor marking code wtsContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
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BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor marking code wts | |
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Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
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BCR48PN OT-363 EHA07176 EHA07193 | |
infineon marking W1s
Abstract: transistor marking code wts BCR108S BCR48PN marking code w1s
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BCR48PN OT-363 EHA07176 EHA07193 infineon marking W1s transistor marking code wts BCR108S BCR48PN marking code w1s | |
transistor marking code wtsContextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3 |
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BCR166. BCR166 BCR166W EHA07183 dissipationBCR166, BCR166W, OT323 transistor marking code wts | |
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Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3 |
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BCR166. BCR166 BCR166W EHA07183 OT323 | |
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transistor marking code wtsContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k |
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BCR48PN VPS05604 EHA07193 OT-363 EHA07176 OT363 transistor marking code wts | |
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Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2 |
OCR Scan |
47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75 | |
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Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation |
OCR Scan |
OT-363 Q62702-C2495 | |
transistor bc 577
Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
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OCR Scan |
47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575 | |
transistor marking code wts
Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
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Q62702-C2496 OT-363 Dec-09-1996 transistor marking code wts pnp array tansistor npn transistor bc icbo nA npn Tansistor BC | |
IC 7481 pin configurationContextual Info: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction |
OCR Scan |
16/SCLK^ KI-9711 GD37fi7fi IC 7481 pin configuration | |
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Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary |
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HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) 256Mb | |
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Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary |
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HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) HY27xSxx121mTxB 256Mb | |
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Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 |
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HY27UA HY27SA 128Mx8bit 64Mx16bit) | |
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Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 |
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HY27UA HY27SA 128Mx8bit 64Mx16bit) HY27xAxx121mTxB | |