TRANSISTOR MARKING CODE NM Search Results
TRANSISTOR MARKING CODE NM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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5447/BEA |
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5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) |
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5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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TRANSISTOR MARKING CODE NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II |
OCR Scan |
OT-23 | |
2SA amplifier
Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
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OCR Scan |
2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; -120V 2SC3906K 2SC4102 2SA1514K 2SA amplifier H1000I 2SA1579 2SC4102 transistor 2SA transistor PNP | |
transistor b1412
Abstract: 2SB1412F5 b1412
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OCR Scan |
2SB1412F5 SC-63) B1412- 2SB1412F5 transistor b1412 b1412 | |
CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
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400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 | |
phototransistor 650 nmContextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar |
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331-JK Q65110A2821 phototransistor 650 nm | |
transistor d-331Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar |
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331-JK Q65110A2821 transistor d-331 | |
led fototransistorContextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung |
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Q65110A2741 led fototransistor | |
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar |
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fototransistor ledContextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung |
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phototransistor 650 nm
Abstract: phototransistor peak 550 nm
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331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm | |
Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung |
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Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung |
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Q65110A2741 | |
SFH7250Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Not for new design Replacement: SFH7250 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und |
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SFH7250 Q65110A2741 SFH7250 | |
Contextual Info: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to |
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NCP120 150mA, NCP120 711AT NCP120/D | |
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Q62702-P1819
Abstract: 0083CA
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GPLY6965 Q62702-P1819 0083CA | |
Q62702-P1819Contextual Info: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung |
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OHF00312 GPL06965 Q62702-P1819 | |
IC 3130
Abstract: 4110 P525 Q62702-P5250 GEOY6976
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Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik |
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Q62702-P5250 suita10 GEOY6976 | |
IC 3130
Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
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E00386 OHF00383 GEO06976 IC 3130 Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto | |
LBN150B01-7
Abstract: MMST3904 MMST3906 rce marking
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LBN150B01 LMN150B01 DS30749 LBN150B01-7 MMST3904 MMST3906 rce marking | |
transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
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331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm | |
DS30749
Abstract: MMST3904 MMST3906 32GZ
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LBN150B01 LMN150B01 OT-26 DS30749 MMST3904 MMST3906 32GZ | |
Contextual Info: NCP130 300mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP130 is a 300 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to |
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NCP130 300mA, NCP130 711AT NCP130/D | |
LBN150B01-7Contextual Info: LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS Please click here to visit our online spice models database. NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like |
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LBN150B01 LMN150B01 DS30749 LBN150B01-7 |