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    TRANSISTOR MARKING CODE H11S Search Results

    TRANSISTOR MARKING CODE H11S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE H11S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking code H11S

    Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w PDF

    transistor marking code H11S

    Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz transistor marking code H11S MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101 PDF

    transistor marking code H11S

    Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the


    Original     		RA05H8693M 866-928MHz RA05H8693M 928MHz transistor marking code H11S H11S RA05H8693M-101 marking CODE H11S PDF

    transistor marking code H11S

    Abstract: H11S RA06H8285M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz


    Original     		RA06H8285M 820-851MHz RA06H8285M 851-MHz transistor marking code H11S H11S PDF

    f953

    Abstract: H11S RA05H9595M RA05H9595M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101 PDF

    H11S

    Abstract: RA05H9595M RA05H9595M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101 PDF

    H11S

    Abstract: RA05H8693M RA05H8693M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.


    Original     		RA05H8693M 866-928MHz RA05H8693M 928MHz H11S RA05H8693M-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the


    Original     		RA06H8285M 820-851MHz RA06H8285M 851-MHz PDF

    MARKING CODE 13w

    Abstract: 13W MARKING
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz Oct2011 MARKING CODE 13w 13W MARKING PDF

    RA13H8891MB-101

    Abstract: H11S MOSFET Power Amplifier Module 900Mhz
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz RA13H8891MB-101 H11S MOSFET Power Amplifier Module 900Mhz PDF

    MOSFET Power Amplifier Module 900Mhz

    Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz MOSFET Power Amplifier Module 900Mhz H11S RF MOSFET MODULE RA13H8891MB-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


    Original     		RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz PDF

    marking CODE H11S

    Abstract: H11S RA06H8285M MOSFET Amplifier Module transistor marking code H11S transistor marking code 12W 12
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz


    Original     		RA06H8285M 820-851MHz RA06H8285M 851-MHz marking CODE H11S H11S MOSFET Amplifier Module transistor marking code H11S transistor marking code 12W 12 PDF

    H11S

    Abstract: RA06H8285M MOSFET Amplifier Module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz


    Original     		RA06H8285M 820-851MHz RA06H8285M 851-MHz H11S MOSFET Amplifier Module PDF

    RA06H8285M-101

    Abstract: H11S marking CODE H11S
    Text: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the


    Original     		RA06H8285M 820-851MHz RA06H8285M 851-MHz Oct2011 RA06H8285M-101 H11S marking CODE H11S PDF