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    TRANSISTOR MARKING CODE 2T Search Results

    TRANSISTOR MARKING CODE 2T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 2T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


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    PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    PDF MMBT4403 MMBT4401) OT-23 2002/95/EC OT-323 OT-523

    Untitled

    Abstract: No abstract text available
    Text: MMST4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available MMST4401 MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    PDF MMST4403 MMST4401) OT-323 2002/95/EC OT-23 OT-523

    transistor MARKING CODE 2T

    Abstract: No abstract text available
    Text: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


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    PDF MMDT4403 OT-363 2002/95/EC OT-363 transistor MARKING CODE 2T

    transistor s9012

    Abstract: S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA) z Complementary To S9013. z Excellent HFE Linearity. S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION


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    PDF -500mA S9012 S9013. OT-23 BL/SSSTC081 transistor s9012 S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    PDF BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94

    2n4403

    Abstract: No abstract text available
    Text: MMBT4403 Small Signal Transistor PNP t c u rod P New TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) max. .004 (0.1)


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    PDF MMBT4403 O-263AB OT-23) OT-23 E8/10K 2n4403

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


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    PDF BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


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    PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    C5 MARKING TRANSISTOR

    Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)


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    PDF BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2

    2T transistor surface mount

    Abstract: transistor MARKING CODE 2T transistor marking code 2.T marking code 2T 2T marking J-STD-020A MMBT4401T MMBT4403T 2t sot IC DATE code
    Text: MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401T Ultra-Small Surface Mount Package SOT-523 Mechanical Data · · · · · · · · Dim Min Max Typ


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    PDF MMBT4403T MMBT4401T) OT-523 OT-523, J-STD-020A MIL-STD-202, MMBT4403T-7 3000/Tape com/datasheets/ap02007 2T transistor surface mount transistor MARKING CODE 2T transistor marking code 2.T marking code 2T 2T marking J-STD-020A MMBT4401T MMBT4403T 2t sot IC DATE code

    Transistor S8550 2TY

    Abstract: sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent S8550 SOT-23 2ty BR S8550 S8550 SOT-23 2ty transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA) z Complementary To S8050. z Excellent HFE Linearity. S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION


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    PDF -500mA S8550 S8050. OT-23 BL/SSSTC080 Transistor S8550 2TY sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent S8550 SOT-23 2ty BR S8550 S8550 SOT-23 2ty transistor

    Transistor Equivalent list

    Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT3904W List List. 1 Package outline. 2


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    PDF FMBT3904W MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 Transistor Equivalent list FMBT3904W 1N916 8 open colector output oc 140 npn transistor

    sot 23 marking code 2t

    Abstract: MMBT4403 2t sot23 NPN medium power transistor in a SOT package MMBT4401 transistor MARKING CODE 2T 2t sot mmbt4403 2t sot-23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT4403 Pb Lead-free MMBT4401 . z Also available in lead free version. z Ideal for medium power amplification and switching.


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    PDF MMBT4403 MMBT4401) OT-23 BL/SSSTC074 sot 23 marking code 2t MMBT4403 2t sot23 NPN medium power transistor in a SOT package MMBT4401 transistor MARKING CODE 2T 2t sot mmbt4403 2t sot-23

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration


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    PDF 10kfl) Q62702-C2376 OT-363 01S0713 fi235bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23


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    PDF Q62702-C2445 OT-23 023SbD5 G120a 015D677

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter


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    PDF Q62702-C825 111Jlllll! fl235b05 053SbOS D1SQ52Ã

    131 Transistor

    Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
    Text: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA


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    PDF 2SC2059K 2SC4099 2SC4649 SC-59) SC-70) SC-75) 2SC2059K, 2SC4099 2SC4649; 131 Transistor TRANSISTOR 2SC 2SC4649 2SC2059K SC-75 T106 T146 transistor 3bt marking 1F SMT3

    transistor K 1377

    Abstract: 1377 transistor "Programmable Unijunction Transistor" programmable unijunction transistor BRY61 BRY61 EQUIVALENT "Programmable Unijunction Transistor" 70v Philips MARKING CODE a5p 33131 unijunction transistor
    Text: • bbS3T31 N AMER 00SSM3Û 0 2T « A P X PHILIPS/DISCRETE b 7E BRY61 D PROGRAMMABLE UNIJUNCTION TRANSISTOR Planar p-n-p-n trigger device in a m icrom iniature plastic envelope intended fo r applications in th ick and th in -film circuits. It is intended fo r use in switching applications such as m otor control, oscillators,


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    PDF bbS3T31 00SSM3Ã BRY61 10kfi OT-23. 100kXL' 10kfl transistor K 1377 1377 transistor "Programmable Unijunction Transistor" programmable unijunction transistor BRY61 BRY61 EQUIVALENT "Programmable Unijunction Transistor" 70v Philips MARKING CODE a5p 33131 unijunction transistor

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS • DESCRIPTION 1 base 2 emitter 3 collector Switching and linear amplification. 3


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    PDF PMST4403 OT323 PMST4401. MAM048 OT323) OT323

    panasonic inverter manual

    Abstract: object counter circuit Infrared object counter circuit panasonic frequency inverter manual reflective sensor ir modulated 1" color sensing sensor Panasonic transistor marking code KASUGA
    Text: 5.5mm RX-LS200 -P M4 (length 16mm) screw with washers >Never use this product as a sensing device for personnel protection. I In case of using sensing devices for personnel protection, use products which meet laws and standards, such as OSHA, ANSI or IEC etc., for personnel protec­


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    PDF 17N-m D-83607 panasonic inverter manual object counter circuit Infrared object counter circuit panasonic frequency inverter manual reflective sensor ir modulated 1" color sensing sensor Panasonic transistor marking code KASUGA

    3BS transistor

    Abstract: No abstract text available
    Text: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from


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    PDF 200mA fl23SbOÂ 023SbDS 0235b05 3BS transistor

    JD 1803

    Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
    Text: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)


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    PDF 2SA1870 2SA1900 JD 1803 2SA1870 100V 2A MPT3 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870