TRANSISTOR MARKING C3N Search Results

transistor marking c3n

Abstract: Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected
Contextual Info: UMC3N Transistor, digital, dual, PNP and NPN, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) package • package marking: C3 • package contains an NPN (DTC114EKA) and a PNP (DTA114EKA) digital transistor, each with two resistors. Base of DTr2 is

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

PC3225

Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

2SK2996

Abstract: transistor 1127
Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •

transistor marking c3n

Contextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage

transistor marking c3n

Abstract: c3n transistor
Contextual Info: TOSHIBA HN3C12F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN 3 • ■ ■ 'm V r1 1 F ■ U nit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

transistor HD marking

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

transistor marking c3n

Contextual Info: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

transistor marking c3n

Contextual Info: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 HF • ■ 'm ■ mmr ■ U nit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

transistor marking c3n

Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

transistor marking c3n

Contextual Info: TO SH IB A HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M 9 f 1 fi F 11 • ■ ■ w u 'm ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

2C11FU

Contextual Info: TOSHIBA H N 2C 11 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri1Fll • ■ u 'm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

transistor marking c3n

Contextual Info: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC

MMBT3906

Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
Contextual Info: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

RO4003C

Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

6 GHZ nec

Abstract: PC2710TB transistor marking c3n C3J marking 8125 marking c3j
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

PC2710TB

Abstract: marking c3j
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC2710TB

Abstract: marking c3j
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mark 303 SOT-23

Abstract: c3nn C4NN
Contextual Info: TC1270A/71A Voltage Supervisor with Manual Reset Input Package Types SOT-143 SOT-143 1 RST 2 4 VDD VSS 1 3 MR 2 RST 2 MR 3 5 4 VDD 3 MR VSS RST NC 1 VDD 2 MR 3 TC1271A VDD TC1270A 1 4 SOT-23-5 SOT-23-5 NC TC1271A VSS TC1270A • Precision voltage monitor - 2.63V, 2.93V, 3.08V, 4.38V and 4.63V trip

marking c3j

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

PC2710TB

Abstract: ro4003 PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

S1F76600

Abstract: 220v generator power booster epson lq 2180 TDK cd 471k capacitor NEC 2501 re 443 FL9H FL9H 330 H FL9H 330uH HP054S HP035
Contextual Info: MF302-11 S1F70000 Series Technical Manual IEEE1394 POWER SUPPLY Controller IC S1R77801F00A S1F70000 Series Technical Manual S1F70000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/