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    TRANSISTOR MARKING AR GHZ Search Results

    TRANSISTOR MARKING AR GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING AR GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2xw

    Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
    Text: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,


    Original     		PDF BGB707L7ESD transistor 2xw transistor table RF Bipolar Transistor smd rf transistor marking

    BFS17A

    Abstract: BFS17AR marking E2
    Text: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain


    Original     		PDF BFS17A BFS17AR D-74025 marking E2

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559

    ic 7912

    Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
    Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352

    laser diode for free space communication

    Abstract: GD16521-48BA GD16521-D STM-16 DIODE h4 1027ib 50W 50 ohm termination
    Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.


    Original     		PDF GD16521 GD16521 STM-16 OC-48 DK-2740 laser diode for free space communication GD16521-48BA GD16521-D DIODE h4 1027ib 50W 50 ohm termination

    Untitled

    Abstract: No abstract text available
    Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.


    Original     		PDF GD16521 GD16521 STM-16 OC-48 DK-2740

    transistor marking 2d ghz

    Abstract: BFG41OW
    Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification


    OCR Scan     		PDF BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW

    BFG403W

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BFG403W 125104/00/04/pp12 BFG403W

    "MARKING CODE P5"

    Abstract: BFG425W
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BFG425W 125104/00/04/pp12 "MARKING CODE P5" BFG425W

    microwave transistor 03

    Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
    Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS


    OCR Scan     		PDF PPC5001T OT447A microwave transistor 03 sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.


    OCR Scan     		PDF BFR93AW BFR93A. MBC870 711062b 7110flEb

    fr5 transistor

    Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
    Text: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit


    OCR Scan     		PDF BFS17 fr5 transistor bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64

    transistor G13

    Abstract: transistor BC548 bc54b BC548 and its h parameter values marking c7 SOT343 4330 030 36301 marking code fz BC548 stripline Amplifier with transistor BC548
    Text: Philips Semiconductors P roduct sp ecification NPN 2 GHz power transistor BFG11W/X FEA TU R E S P IN N IN G • S O T 343 • High power gain PIN • High efficiency • Small size discrete power amplifier • 1.9 G H z operating area • Gold metallization ensures excellent reliability


    OCR Scan     		PDF BFG11W/X OT343 OT343 MGD416 711082b OT343. C1104554 transistor G13 transistor BC548 bc54b BC548 and its h parameter values marking c7 SOT343 4330 030 36301 marking code fz BC548 stripline Amplifier with transistor BC548

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41470 F eatures • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


    OCR Scan     		PDF AT-41470 5965-8927E 5966-4946E

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure


    OCR Scan     		PDF bbS3T31 0D14T07 LAE4002S

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm

    TRANSISTOR 9335

    Abstract: BFG480W
    Text: DISC RETE S E M IC O N D U C TO R S BFG480W NPN wideband transistor 1998 M ar 06 P relim inary specification File under D iscrete S em iconductors, SC 14 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification NPN w i d e b a n d t ransi st or


    OCR Scan     		PDF BFG480W 125104/00/01/pp16 TRANSISTOR 9335 BFG480W

    Untitled

    Abstract: No abstract text available
    Text: MSC3130T1* CASE 318D-03, STYLE 1 CO LLEC TO R m M AXIM U M RATINGS TA = 2 5 C Rating C o lle c to r-B a s e V olta ge C o lle c to r-E m itte r V olta ge E m itte r-8 a s e V olta ge C o lle c to r C u rre n t-C o n tin u o u s Symbol Value Unit VCBO 15


    OCR Scan     		PDF MSC3130T1* 318D-03, SC-59

    ac 51 0865 75 849

    Abstract: 7082 B amplifier 7082 B ic audio amplifier
    Text: DATA SHEET SILICON TRANSISTOR juPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Current, High Gain |Szie|2 = 9 dB T Y P . @ Vce = 2 V, le = 7 mA, f = 2 GHz


    OCR Scan     		PDF uPA807T 2SC5179) PA807T uPA807T-T1 ac 51 0865 75 849 7082 B amplifier 7082 B ic audio amplifier

    ap 4606

    Abstract: nec 2651 ic CD 4047 8 pin ic 3773
    Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm |Szie|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5177 SC-59 2SC5177-T1 2SC5177-T2 ap 4606 nec 2651 ic CD 4047 8 pin ic 3773

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC5254 <;r s i s TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE MT V a V VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f=2GHz t High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF 2SC5254

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO


    OCR Scan     		PDF 2SC5256

    pin configuration of ic 4518

    Abstract: MRFIC 917
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line M RFIC0904 9 0 0 M H z G aA s T w o -S ta g e D river A m p lifie r The MRFIC0904 is an integrated driver am plifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes


    OCR Scan     		PDF MRFIC0904 RFIC0904 MRFIC0904 pin configuration of ic 4518 MRFIC 917

    2SC5091

    Abstract: 2SC5256 HN9C04FT IS21E12
    Text: TO SH IBA TENTATIVE HN9C04FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C04FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF HN9C04FT N9C04FT 2SC5256 2SC5091 2SC5091 HN9C04FT IS21E12