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    TRANSISTOR MARKING AR CODE Search Results

    TRANSISTOR MARKING AR CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING AR CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 PDF

    TRANSISTOR marking ar code

    Abstract: KSA1201 KSC2881
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 TRANSISTOR marking ar code KSC2881 PDF

    transistor 1203

    Abstract: No abstract text available
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSA1203 KSC2883 OT-89 KSA1203OTF KSA1203YTF transistor 1203 PDF

    transistor 1fp

    Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
    Text: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC847C BC846A transistor 1fp 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 npn general purpose transistors 1gp npn code 1gp PDF

    transistor B3 OF

    Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor PDF

    B3 transistor

    Abstract: KSA1203 KSC2883
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSC2883 OT-89 KSA1203 B3 transistor KSC2883 PDF

    transistor 6Cp

    Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
    Text: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BC817; BC818 BC807 BC808. BC817 BC817-16 BC817-25 BC817-40 transistor 6Cp 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 PDF

    mar-08 transistor

    Abstract: MCD920 DEVICE MARKING CODE 150A PBSS4350D PBSS5350D MCD919
    Text: Philips Semiconductors Product specification NPN transistor PBSS4350D FEATURES PINNING • High current capabilities PIN • LOW VcEsat- DESCRIPTION 1 collector 2 collector APPLICATIONS 3 base • H eavy duty battery pow ered equipm ent Autom otive, T elecom and A udio/V ideo such as m otor and lamp


    OCR Scan     		SC-74 PBSS5350D. PBSS4350D PBSS4350D OT457) Maxi20 OT457 SC-74 mar-08 transistor MCD920 DEVICE MARKING CODE 150A PBSS5350D MCD919 PDF

    SOT89 MARKING CODE B2

    Abstract: SOT89 MARKING CODE S3
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSD1621 KSD1621 KSB1121 OT-89 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF SOT89 MARKING CODE B2 SOT89 MARKING CODE S3 PDF

    KSB1121

    Abstract: KSD1621
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSD1621 KSB1121 OT-89 KSD1621 KSB1121 PDF

    microwave transistor 03

    Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
    Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS


    OCR Scan     		PPC5001T OT447A microwave transistor 03 sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor PDF

    6R190C6

    Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 smd TRANSISTOR code marking PR smd transistor marking da EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da PDF

    KSC2982

    Abstract: No abstract text available
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		KSC2982 OT-89 KSC2982 PDF

    TRANSISTOR SMD MARKING CODE 210

    Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking


    Original     		LMSB709LT1 3000/Tape LMSB709LT1G OT-23 LMSB709LT1-1/2 LMSB709LT1-2/2 TRANSISTOR SMD MARKING CODE 210 SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h PDF

    N-Channel Depletion-Mode MOSFET

    Abstract: No abstract text available
    Text: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan     		LND250 O-236AB* LND250K1 OT-23: 300jxs N-Channel Depletion-Mode MOSFET PDF

    BCX19

    Abstract: BCX20 npn general purpose transistors application BCX18
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BCX19; BCX20 BCX17and BCX18. BCX19 BCX20 npn general purpose transistors application BCX18 PDF

    transistor marking 2d ghz

    Abstract: BFG41OW
    Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification


    OCR Scan     		BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW PDF

    BFG403W

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		BFG403W 125104/00/04/pp12 BFG403W PDF

    "MARKING CODE P5"

    Abstract: BFG425W
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		BFG425W 125104/00/04/pp12 "MARKING CODE P5" BFG425W PDF

    transistor marking codes list

    Abstract: MQ 6 SENSOR 2n5088 transistor
    Text: E Ü ffl H E W L E T T mLUM P A C K A R D Low Current Bar Code D igitizer IC Technical Data HBCC-0500 Description The Hewlett-Packard Low Current Bar Code Digitizer IC allows designers to incorporate the high ambient light rejection and low power consum ption features of


    OCR Scan     		HBCC-0500 HBCC-1580 HBCC-1590 transistor marking codes list MQ 6 SENSOR 2n5088 transistor PDF

    PDTA143EU

    Abstract: 3c transistor Transistor Bo 47 PDTA143
    Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143EU FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£l each • Simplification of circuit design • Reduces number of components and board space. APPLICATIO NS


    OCR Scan     		PDTA143EU OT323) PDTC143EU. PDTA143EU 3c transistor Transistor Bo 47 PDTA143 PDF

    DOC204943

    Abstract: No abstract text available
    Text: REV A DESCRIPTION DATE 4/23/14 NIR-52399 PREP DF/SM APPD LT Oscillator Specification, Hybrid VCXO For MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM Hi-Rel Standard, LVDS Output CODE IDENT NO


    Original     		NIR-52399 DOC204899 DOC204943 PDF

    AN-994

    Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
    Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRF740AS/LPbF O-262 IRF740A AN-994. AN-994 12V 10A SMPS 6-0A36 IRF740AS PDF