TRANSISTOR SMD MARKING CODE 210
Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking
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LMSB709LT1
3000/Tape
LMSB709LT1G
OT-23
LMSB709LT1-1/2
LMSB709LT1-2/2
TRANSISTOR SMD MARKING CODE 210
SMD Transistor Y14
TRANSISTOR SMD MARKING CODE 304 a
TRANSISTOR SMD MARKING CODE X D
marking code br SMD
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE PD
transistor smd code marking 102
transistor smd arx
TRANSISTOR SMD MARKING CODE 304 h
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transistor 033
Abstract: MMBT5088 MMBT5089 marking 1R NPN
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
transistor 033
MMBT5089
marking 1R NPN
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Untitled
Abstract: No abstract text available
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
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PDF
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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sot-23 2L
Abstract: No abstract text available
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 2L
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sot-23 Marking 2L
Abstract: MMBT5401 sot23 marking 2l
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 Marking 2L
MMBT5401
sot23 marking 2l
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
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JESD22a121
Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
JESD22a121
marking A02
KTMC1060SC
JESD22A111
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PDF
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MMBTA05
Abstract: No abstract text available
Text: MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor A L FEATURES 3 3 Driver Transistor 1 1 2 K E 2 D MARKING
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MMBTA05
OT-23
MMBTA05
100mA
100mA,
100MHz
26-Oct-2009
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1N914
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G
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LMBT5401DW1T1G
3000/Tape
LMBT5401DW1T3G
10000/Tape
OT-363/SC-88
419B-01
419B-02.
1N914
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
MMBT2222AT
OT-523F
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1N914
Abstract: LMBT5401LT1G
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
OT-23
1N914
LMBT5401LT1G
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Untitled
Abstract: No abstract text available
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06
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MMBT3906T
OT-523F
MMBT3904T
MMBT3906T
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2N7002ESPT
Abstract: 2N7002ES 2N70 pK1 TRANSISTOR ISS101
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002ESPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 MARKING .055 1.40 .047 (1.20)
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2N7002ESPT
OT-23
2N7002ESPT
2N7002ES
2N70
pK1 TRANSISTOR
ISS101
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LMBT5551DW1T1G
Abstract: 1N914 LMBT5551DW1T3G
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G
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Original
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
419B-01
419B-02.
LMBT5551DW1T1G
1N914
LMBT5551DW1T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04
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MMBT3904T
OT-523F
MMBT3906T
MMBT3904T
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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marking A04
Abstract: KTMC1060SC MMBT3904T MMBT3906T a04 marking
Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A04 • Well suited for portable application
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MMBT3904T
OT-523F
MMBT3906T
MMBT3904T
marking A04
KTMC1060SC
a04 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
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RF POWER TRANSISTOR 100MHz
Abstract: transistor marking RF transistor case To 92
Text: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C
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MPSH81
100MHz
25-April
RF POWER TRANSISTOR 100MHz
transistor marking RF
transistor case To 92
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
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OCR Scan
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S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
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PDF
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BF822W
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF820W; BF822W NPN high voltage transistor MARKING FEATURES • S-mlni package TYPE NUMBER MARKING CODE BF820W -1 V BFB22W -1X • High voltage. APPLICATIONS Especially intended for telephony and professional communication equipment.
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OCR Scan
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BF820W
BFB22W
BF820W;
BF822W
OT323
OT323)
BF822W
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PDF
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