Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
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JESD22a121
Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
JESD22a121
marking A02
KTMC1060SC
JESD22A111
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
MMBT2222AT
OT-523F
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C2320
Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
Text: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W
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17-16W
17-25W
17-40W
18-16W
18-25W
18-40W
Q62702-C2320
Q62702-C2278
Q62702-C2321
Q62702-C2322
C2320
BC 170 transistor
Q62702-C2320
transistor 6cs
TRANSISTOR c2324
BC817W
transistor bc icbo nA npn
transistor marking A02
c2278
C2324
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Untitled
Abstract: No abstract text available
Text: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TP0620
DSPD-TO92TapingSpec
B070610
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h833
Abstract: 1N914 HV833 HV833MG HV833MG-G 29nF A021909
Text: HV833 High Voltage EL Lamp Driver Features General Description ► 1.8 to 6.5V operating supply voltage ► DC to AC conversion ► Separately adjustable lamp and converter frequency ► Output voltage regulation ► Enable/disable function ► Patented output timing for high efficiency
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HV833
100nA
HV833
10-12in2)
DSFP-HV833
A021909
h833
1N914
HV833MG
HV833MG-G
29nF
A021909
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transistor D361
Abstract: design ideas el inverter transistor marking A02 1ddd365aa bujeon diode MARKING CODE 917 sumida lcd inverter pin diagram sumida inverter D361
Text: Data Sheet D365A Electroluminescent Lamp Driver IC General Description: The Durel D365 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance, and simplify the design of EL backlighting systems. The D365 IC and
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D365A
transistor D361
design ideas
el inverter
transistor marking A02
1ddd365aa
bujeon
diode MARKING CODE 917
sumida lcd inverter pin diagram
sumida inverter
D361
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MMRF1019NR4
Abstract: No abstract text available
Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
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MMRF1019N
MMRF1019NR4
7/2014Semiconductor,
MMRF1019NR4
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SITP
Abstract: TP0604 TP0604N3 SOW MARKING
Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown
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TP0604
DSFP-TP0604
A022309
SITP
TP0604
TP0604N3
SOW MARKING
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sitn
Abstract: marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06
Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0604
140pF
DSFP-TN0604
A022309
sitn
marking n3
TN0604N3-G
125OC
TN0604
TN0604WG-G
3V02
D0804
SiTN 06
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TN0604WG-G
Abstract: 75E1 TN0604 TN0604N3-G
Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0604
140pF
DSFP-TN0604
A022309
TN0604WG-G
75E1
TN0604
TN0604N3-G
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82306
Abstract: CPH3109
Text: VEC2102 Ordering number : ENA0291 SANYO Semiconductors DATA SHEET VEC2102 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting.
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VEC2102
ENA0291
VEC2102
CPH3109
A0291-4/4
82306
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Untitled
Abstract: No abstract text available
Text: VEC2102 Ordering number : ENA0291 VEC2102 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting.
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VEC2102
ENA0291
VEC2102
CPH3109
A0291-4/4
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johanson
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284LSR1
MRF284LR1
johanson
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
A9M15
AFT09MS015N
TRANSISTOR Z10
D55295
815 transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
VP0109
DSFP-VP0109
A020408
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VP0106
Abstract: No abstract text available
Text: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0106
VP0106
DSFP-VP0106
A020408
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TRANSISTOR N3
Abstract: vp0104
Text: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0104 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0104
VP0104
DSFP-VP0104
A020408
TRANSISTOR N3
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s791
Abstract: transistor B 722
Text: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain
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569-GS
s791
transistor B 722
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DIN125A
Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Text: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:
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T-33-17
DIN41869
DIN125A
BF472S
T0126
15A3DIN
transistor bc 470
BF470S
din 125a
transistor Al6
a02 Transistor rf
TRANSISTOR G13
transistor marking code AL
BF472
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Untitled
Abstract: No abstract text available
Text: P & 2SA812S SEMICONDUCTOR FORW ARD INTERNATIONAL B L B C IR O H R S LTD. T EC H N IC A L DATA PNP EPITAXIAL SILICON TRANSISTOR L O W FR E Q U E N C Y A M PL IFIE R Package: SOT-23 * Complement to2SC1623S * Collector-Base Voltage: Vcbo—60V * Excellent Hfe linearity.
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2SA812S
OT-23
to2SC1623S
b-25V
062ii
300uS,
-100uA
-100mA
-10mA
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