marking 9D transistor
Abstract: transistor transistor marking 9D KIA79L09F
Text: SEMICONDUCTOR KIA79L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 9D KIA79L09F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KIA79L09F
OT-89
marking 9D transistor
transistor
transistor marking 9D
KIA79L09F
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Untitled
Abstract: No abstract text available
Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05
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MT3S110FS
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MT3S110FS
Abstract: No abstract text available
Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05
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MT3S110FS
MT3S110FS
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2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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2SC5317FT
2SC5317FT
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2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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2SC5317FT
2SC5317FT
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pnp transistor A1 sot-23
Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
Text: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector
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BC856/857/858/859/860
BC859,
BC860
BC846
BC850
OT-23
BC856
BC857/860
BC858/859
pnp transistor A1 sot-23
FAIRCHILD SOT-23 MARK 30
MARKING 3E SOT23-3
Cross Reference sot23
SOT-23 Product Code Top Mark PC
mark code 14 SOT-23
16 TRANSISTOR sot-23
3B SOT23-3
FAIRCHILD SOT-23 MARK PC
9aa marking
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MT4S03A
Abstract: No abstract text available
Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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MT4S03A
MT4S03A
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MT4S03A
Abstract: No abstract text available
Text: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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MT4S03A
MT4S03A
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MT4S03AU
Abstract: 2-2K1A
Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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MT4S03AU
MT4S03AU
2-2K1A
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Untitled
Abstract: No abstract text available
Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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MT4S03A
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MT4S03
Abstract: No abstract text available
Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT4S03AU
MT4S03
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marking MS
Abstract: TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"
Text: Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.
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2SA1963
2018B
2SA1963]
marking MS
TA-0541
TRANSISTOR PNP 5GHz
common base amplifier circuit designing
transistor 5ghz pnp
2SA1963
5GHz PNP transistor
"marking ms"
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2SC1412K
Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.
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2SA1037AK
13t01
09kOl
SC-88
SC-74
1T106
Cl021
2SC1412K
2SA1037AK
UMW8
2sc1412
2SC241
baw 92
FMY3
2SC2412AK
2SC141
2SC241ZK
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SMD TRANSISTOR MARKING 9D
Abstract: NXP SMD TRANSISTOR MARKING CODE PMD9003D SMD TRANSISTOR MARKING 904
Text: PMD9003D MOSFET driver Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET , NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small
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PMD9003D
OT457
SC-74)
PMD9003D
SMD TRANSISTOR MARKING 9D
NXP SMD TRANSISTOR MARKING CODE
SMD TRANSISTOR MARKING 904
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2SC5317F
Abstract: No abstract text available
Text: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1
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2SC5317F
16GHz
2SC5317F
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Untitled
Abstract: No abstract text available
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
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2SC5317
16GHz
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VHF-UHF Band Low Noise Amplifier
Abstract: 2SC5317 2Ghz amplifier
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
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2SC5317
16GHz
VHF-UHF Band Low Noise Amplifier
2SC5317
2Ghz amplifier
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2SC5317
Abstract: No abstract text available
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
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2SC5317
16GHz
2SC5317
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Untitled
Abstract: No abstract text available
Text: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p
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2SC5316
16GHz
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2SC5317FT
Abstract: No abstract text available
Text: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)
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2SC5317FT
16GHz
2SC5317FT
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1
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2SC5317F
16GHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05
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2SC5317FT
16GHz
S21el2
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Untitled
Abstract: No abstract text available
Text: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
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2SC5315
16GHz
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marking MS
Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Text: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.
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EN5230
2SA1963
marking MS
rt 0608
TA-0541
5GHz PNP transistor
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