TRANSISTOR MARKING 9D Search Results

marking 9D transistor

Abstract: transistor transistor marking 9D KIA79L09F
Contextual Info: SEMICONDUCTOR KIA79L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 9D KIA79L09F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

K 4005 transistor

Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Contextual Info: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for

Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

MT3S110FS

Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

2SC5317FT

Contextual Info: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SC5317FT

Contextual Info: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SC5317F

Contextual Info: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1

Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

2SC5317

Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

Contextual Info: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p

2SC5317FT

Contextual Info: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)

Contextual Info: T O SH IB A 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1

Contextual Info: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05

pnp transistor A1 sot-23

Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

MT4S03A

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

MT4S03A

Contextual Info: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

MT4S03AU

Abstract: 2-2K1A
Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

MT4S03

Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

marking MS

Abstract: TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"
Contextual Info: Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.

2SC1412K

Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Contextual Info: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.

marking MS

Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Contextual Info: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.

SMD TRANSISTOR MARKING 9D

Abstract: NXP SMD TRANSISTOR MARKING CODE PMD9003D SMD TRANSISTOR MARKING 904
Contextual Info: PMD9003D MOSFET driver Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET , NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small