Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Untitled
Abstract: No abstract text available
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
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2AK TRANSISTOR
Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
2AK TRANSISTOR
PNP Epitaxial Silicon Transistor sot-23
marking 2AK
MMBT3906K 2ak
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MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Marking 2A
Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3906
OT-23
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA,
100MHz
Marking 2A
2a transistor sot 23
MMBT3906 SOT-23
SOT-23 2A
2A marking MMBT3906
transistor SOT23 2A
MMBT3906
sot-23 2A transistor
2A MARKING SOT23
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SMD TRANSISTOR MARKING 2A pnp
Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
MARKING SMD TRANSISTOR P
CMBT3906
MARKING SMD PNP TRANSISTOR 2a
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A
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OT-23
CMBT3906
C-120
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SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
CMBT3906
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KST3906
Abstract: WH*s
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3906
OT-23
KST3906
WH*s
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Untitled
Abstract: No abstract text available
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3906
OT-23
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2AK TRANSISTOR
Abstract: MMBT3906K MMBT
Text: MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage
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MMBT3906K
OT-23
MMBT3906K
2AK TRANSISTOR
MMBT
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Untitled
Abstract: No abstract text available
Text: STC403D Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE sat =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. Marking STC403D STC403 Package Code D-PAK
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STC403D
STC403
KST--D006-000
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Untitled
Abstract: No abstract text available
Text: STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. Marking Package Code STC403 STC403 TO-220F-3L
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STC403
STC403
O-220F-3L
KSD-T0O017-000
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d82 sot23
Abstract: B772SS D882SS
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot23
B772SS
D882SS
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d82 sot23
Abstract: D882* transistor
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
D882SSL
10sing
QW-R206-018
d82 sot23
D882* transistor
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d82 sot-23
Abstract: datasheet d882 B772SS D882SS d82 sot23
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot-23
datasheet d882
B772SS
D882SS
d82 sot23
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STC403
Abstract: AUK Transistor transistor stc403
Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403
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STC403
O-220F-3L
SDB20D45
KSD-T0O017-002
STC403
AUK Transistor
transistor stc403
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2A MARKING SOT23
Abstract: No abstract text available
Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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MMBT589
OT-23
OT-23
-100A
-10mA
-500mA
-500mA,
-50mA
-100mA
2A MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403
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STC403
O-220F-3L
SDB20D45
KSD-T0O017-003
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stc403
Abstract: STC403D
Text: STC403D Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VC E S A T =0.4V Max. • High Voltage : VC E O =60V Min. Ordering Information Type NO. STC403D Marking Package Code STC403
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STC403D
STC403
KST--D003-000
stc403
STC403D
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CMBT3906
Abstract: No abstract text available
Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
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CMBT3906
CMBT3906
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Marking Losa
Abstract: FZT705 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 - FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT605 PART MARKING DETAIL - fc
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OT223
FZT605
FZT705
SYM10V
FZT705
FZT704
Marking Losa
marking FZT705
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