TRANSISTOR MARKING 1B Search Results

CMBT3906

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 < PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 ~H ‘ 0.09 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 .4 J.02_ 0.89 0.60 0.40

Contextual Info: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90

Contextual Info: CDÎL CMBT5551 SILICON N -P-N HIGH-VOLTAGE TRANSISTOR N -P-N transistor Marking CMBT5551 = GI PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .1 4 •^^55 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

Contextual Info: CI CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 2.4 1.2 R0.1 -004 ' _L02 0.60 0.40 0.70

Contextual Info: UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zDimensions (Unit : mm) UMT2907A zPackage, marking and packaging specifications

Marking R2f

Abstract: r2f transistor MMST2222A MMST2907A SST2222A SST2907A T106 T116 T146 UMT2222A
Contextual Info: UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A zFeatures 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A. zDimensions (Unit : mm) UMT2907A zPackage, marking and packaging specifications

Contextual Info: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications

MMST2222A

Abstract: MMST2907A PN2222A PN2907A SST2222A SST2907A T106 UMT2222A UMT2907A PN290
Contextual Info: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A zExternal dimensions (Unit : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) zPackage, marking and packaging specifications

r2f transistor

Abstract: MMST2222A MMST2907A PN2222A PN2907A SST2222A SST2907A T106 UMT2222A UMT2907A
Contextual Info: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications

ic 556

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking PACKAGE OUTLINE DETAILS A LL DIM ENSIO NS IN mm BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 f I i 3 I Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3906 = 2A PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40 1.80

Contextual Info: BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

sst4403

Abstract: MMST4401 MMST4403 SST4401 T116 T146
Contextual Info: SST4403 / MMST4403 Transistors PNP Medium Power Transistor Switching SST4403 / MMST4403 zDimensions (Unit : mm) zFeatures 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 SST4403 (1) Emitter (2) Base (3) Collector zPackage, marking, and packaging specifications

marking CODE r1a

Abstract: 2N3904 transistor R1A R1A Marking npn SST3904 UMT3904 h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F
Contextual Info: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! Features ! External dim ensions Units : mm 1 ) B V ceo > 40V (Ic = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! Package, marking and packaging specifications

PN4401

Abstract: R2X marking
Contextual Info: SST4403 / MMST4403 / 2N4403 Transistors NPN Medium Power Transistor Switching SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking

Contextual Info: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777

PN4401

Contextual Info: SST4403 / MMST4403 / 2N4403 Transistors PNP Medium Power Transistor Switching SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking

AC 187 npn transistor TO 1

Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Contextual Info: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K

transistor rf cm 1104

Abstract: SL 1424 11p
Contextual Info: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Contextual Info: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

BSR17A

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM