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    TRANSISTOR MARKING 0.5 Search Results

    TRANSISTOR MARKING 0.5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING 0.5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL


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    FJX3904 SC-70 FJX3904TF PDF

    transistor marking 4D

    Abstract: PNP 400V MMBTA44 MMBTA94
    Text: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code


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    MMBTA94 -400V, 350mW OT-23 MMBTA44 -50mA -100mA -10mA, -50mA, transistor marking 4D PNP 400V MMBTA44 MMBTA94 PDF

    npn transistor 0.1A 400V sot-23

    Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
    Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44


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    MMBTA44 350mW OT-23 21-Sep-2010 npn transistor 0.1A 400V sot-23 npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D PDF

    2SC5343

    Abstract: No abstract text available
    Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.5Ref. 0.38Ref. MINO.1 0.01-0.10 Tolerance:0.1mm Marking 0.124±0.10 2 Collector Dissipation:Pc=225mW


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    2SC5343 OT-23 OT-23 97Ref. 38Ref. 225mW 2SC5343 PDF

    TRANSISTOR SMD MARKING CODE 210

    Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking


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    LMSB709LT1 3000/Tape LMSB709LT1G OT-23 LMSB709LT1-1/2 LMSB709LT1-2/2 TRANSISTOR SMD MARKING CODE 210 SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h PDF

    1N914

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G


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    LMBT5401DW1T1G 3000/Tape LMBT5401DW1T3G 10000/Tape OT-363/SC-88 419B-01 419B-02. 1N914 PDF

    UMT222A

    Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


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    BC847B BC857B. UMT222A TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


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    BC847B BC857B. BC847B PDF

    1N914

    Abstract: LMBT5401LT1G
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G


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    LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape OT-23 1N914 LMBT5401LT1G PDF

    LMBT5551DW1T1G

    Abstract: 1N914 LMBT5551DW1T3G
    Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G


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    LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88 419B-01 419B-02. LMBT5551DW1T1G 1N914 LMBT5551DW1T3G PDF

    CQ 523

    Abstract: MARKING CODE cq sot-89
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping


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    L2SC2411KXLT1G L2SA1036K 236AB) L2SC2411KPLT1G 3000/Tape L2SC2411KPLT3G 10000/Tape L2SC2411KQLT1G L2SC2411KQLT3G CQ 523 MARKING CODE cq sot-89 PDF

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


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    MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


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    MMBTH10LT1, MMBTH10-4LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHRT5993GP SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SOT-23 .019 0.50 MARKING .066 (1.70) * NPN RF Transistor .110 (2.80) .082 (2.10) .119 (3.04)


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    CHRT5993GP OT-23 OT-23) -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel


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    LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88 PDF

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


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    MMBT2907AK MMBT2907AK OT-23 2FK transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


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    MMBT3904K MMBT3904K OT-23 PDF

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


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    MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn PDF

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


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    MMBTA13 MMBTA13 OT-23 QW-R206-006 PDF

    2FK transistor

    Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


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    MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor PDF

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


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    MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor PDF

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


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    MMBTA13 MMBTA13 OT-23 100ms QW-R206-006 PDF

    1N914

    Abstract: LMBT5551DW1T1G LMBT5541DW1T1G
    Text: LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5541DW1T1G FEATURE 6 5 ƽ We declare that the material of product is ROHS compliant and halogen free. 4 1 2 DEVICE MARKING AND ORDERING INFORMATION Marking Shipping LMBT5541DW1T1G GL


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    LMBT5541DW1T1G 3000/Tape LMBT5541DW1T3G 10000/Tape OT-363/SC-88 419B-01 419B-02. 1N914 LMBT5551DW1T1G LMBT5541DW1T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SST6839 I PNP General Purpose Transistor SST6839 •Features 1 B V c£c < — 40V lc = — 1mA) 2 ) Com plem ents the SST6838. •External dimensions (Units : mm) •Package, marking« and packaging specifications Type S ST 6S39 Package Marking


    OCR Scan
    SST6839 SST6838. SPEC-A32) PDF