TRANSISTOR MAKING LIST Search Results

IC 4094

Abstract: LB1741 DIP18
Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.

DIP18

Abstract: LB1741 mm 105k BUT 11 Transistor
Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.

TS16949

Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

4.702.119

Abstract: 41532 AT-32032 AT-41532 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70
Contextual Info: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

transistor TT 2146

Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
Contextual Info: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use

transistor A 564

Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Contextual Info: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK 32032
Contextual Info: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

transistor TT 2146

Abstract: marking R5* sc-70
Contextual Info: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

AT-32032

Abstract: AT-41532 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70
Contextual Info: Agilent AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use

AT-41532

Abstract: TRANSISTOR TT 2190 transistor ajw
Contextual Info: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

AN1232

Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Contextual Info: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical

4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Contextual Info: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

"PNP Transistor"

Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

2SC4272

Abstract: EN2970
Contextual Info: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0

2SC4272

Abstract: ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611
Contextual Info: Ordering number:ENN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 0.4 1.0

2SA1864

Abstract: 47192
Contextual Info: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.

"marking ca"

Abstract: 2SA1866 ITR04950 ITR04951 ITR04952 ITR04953 ITR04954
Contextual Info: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.

2SA1866

Abstract: ITR04950 ITR04951 ITR04952 ITR04953 ITR04954 47k marking IC
Contextual Info: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.

47192

Abstract: 2SA1864
Contextual Info: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.

ZXTN25060BZTA

Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in