TRANSISTOR MAA Search Results

Contextual Info: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope

Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ • GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL

Contextual Info: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY

transistor 3007A

Abstract: TRANSISTOR 3064 3007a HORIZONTAL DRIVER TRANSISTOR 3003a power transistor LB1233 DARLINGTON TRANSISTOR ARRAY LB1293 high voltage high current darlington array 18 lb1290
Contextual Info: Package Device Number of . Drawing Type . pins and : number configuration Description Features LB1217 DIP 16 3064 5-channel transistor array Five independent transistors LB1231 DIP 16 3064 7-channel high-voltage Darlington transistor array 50 V output voltage, 500 mA output current

W05BE

Abstract: 2-32B1C
Contextual Info: TOSHIBA MP4507 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2907 equivalent

Contextual Info: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.

Contextual Info: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

ATC600S100JW

Abstract: m 53206 ATC600S100J MCR10EZHF49R9 ECD-G0ER709 ECD-G0ER909 GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 PFQN-16
Contextual Info: RoHS Compliant 3.4—3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN

rIP 31 TRANSISTOR

Abstract: TK5L10 NPN DARLINGTON TRANSISTOR ARRAY
Contextual Info: TRANSISTOR ARRAY TK s e r ie s TRIPLE NPN DARLINGTON TRANSISTOR ARRAY T K 5 L 1 0 / T K 5 L 2 0 F e a tu r e s • N PN 3 • 8 t° > *r — ^ • V c e o = 100V Ü ¡Ü # t/± , • > 9~ V 4 > X 7 -i > Ì / 200V P t = 2.5W h m i n .1 5 0 0 • • • •

2N2484

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO

MJE13005

Contextual Info: K EC . SEMICONDUCTOR MJE13005 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. A

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

2-10P1B

Abstract: 2SK2733 transistor k 208
Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

Contextual Info: FJX3008R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 47 kΩ, R2 = 22 kΩ • Complement to FJX4008R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJX3007R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 47 kΩ • Complement to FJX4007R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJX4003R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 22 kΩ • Complement to FJX3003R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJX3007R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 22 kΩ, R2 = 47 kΩ • Complement to FJX4007R Application • Switching Application (Integrated Bias Resistor)