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    TRANSISTOR M5 Search Results

    TRANSISTOR M5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated


    Original     		PDF 400mA M54583WP 400mA) M54583 Jul-2011 Jun-2011

    M54523

    Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic

    M54583FP

    Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array

    M54522

    Abstract: m54566 M54566WP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566WP 400mA M54566WP 400mA) M54522 m54566

    8 pin 4v power supply ic

    Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS

    18P4G

    Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP


    Original     		PDF M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"

    M54522

    Abstract: M54566DP Seven Transistor Array PNP m54566
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated


    Original     		PDF M54566DP 400mA M54566DP 400mA) Jul-2011 M54522 Seven Transistor Array PNP m54566

    M54583WP

    Abstract: in4418
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated


    Original     		PDF M54583WP 400mA M54583WP 400mA) Jul-2011 in4418

    M54523

    Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 18P4G 20P2N-A M54583 pnp 8 transistor array 8-channel PNP darlington array

    M54577P

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M54577P M54577P

    8 pin 4v power supply ic

    Abstract: M54222 Seven Transistor Array PNP M54566FP pnp 8 transistor array M54566P transistor arrays 5v m54566 M5422 pnp darlington array
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic M54222 Seven Transistor Array PNP pnp 8 transistor array transistor arrays 5v m54566 M5422 pnp darlington array

    M54537FP

    Abstract: M54537P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION M54537P and M54537FP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M54537P/FP 350mA M54537P M54537FP 350mA) 250mA)

    18P4G

    Abstract: 20P2N-A M54513FP M54513P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M54513P/FP M54513P M54513FP 18P4G 20P2N-A

    M54519P

    Abstract: M54519FP IC M54519P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


    Original     		PDF M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P

    pnp darlington array

    Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor


    Original     		PDF M54587P/FP 500mA M54587P M54587FP pnp darlington array PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A

    M57917L

    Abstract: sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10
    Text: MITSUBISHI HYBRID ICs M57917L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57917L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM10XX, QM20XX, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due


    Original     		PDF M57917L M57917L QM10XX, QM20XX, 21MAX. 2500Vrms sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10

    M54563WP

    Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		PDF M54563WP 500mA M54563WP 500mA) Jul-2011 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl

    M57950L

    Abstract: 10 100 1000 base T Transformer module m57950l 01r QM50DY HL 100 Transistor
    Text: MITSUBISHI HYBRID ICs M57950L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57950L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due


    Original     		PDF M57950L M57950L QM30DY, QM50DY, 10-pin 29MAX. 20MAX. 2500Vrms 1/2QM50DY 10 100 1000 base T Transformer module m57950l 01r QM50DY HL 100 Transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M54561P 300mA M54561P 300mA)

    M54516P

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


    Original     		PDF M54516P 500mA M54516P 500mA)

    NPN DARLINGTON TRANSISTOR ARRAY

    Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


    Original     		PDF M54522WP 400mA M54522WP 400mA) Jul-2011 NPN DARLINGTON TRANSISTOR ARRAY 300 W npn darlington power transistors Transistor Array

    M54530FP

    Abstract: M54530P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


    Original     		PDF M54530P/FP 400mA M54530P M54530FP 400mA)

    M54585FP

    Abstract: M54585P 18P4G 20P2N-A npn 8 transistor array 24 "transistor array" M54585
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits


    Original     		PDF M54585P/FP 500mA M54585P M54585FP 500mA) 18P4G 20P2N-A npn 8 transistor array 24 "transistor array" M54585