TRANSISTOR M4A Search Results

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

transistor m4a

Contextual Info: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit：inch mm 0.004(0.10)MIN. NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA 0.087(2.20) 0.070(1.80)

transistor m4a

Contextual Info: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit：inch mm 0.004(0.10)MIN. NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA 0.087(2.20) 0.070(1.80)

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.120(3.04) 0.110(2.80) • Collector current I C = 600mA

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) Collector current IC = 600mA .054(1.35) .045(1.15) Both normal and Pb free product are available : .087(2.2) .078(2.0)

MMDT4401

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

transistor m4a

Contextual Info: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb

transistor m4a

Contextual Info: DATA SHEET MMBT4401W W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) Collector current IC = 600mA .054(1.35) .045(1.15) In compliance with EU RoHS 2002/95/EC directives .087(2.2)

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts • NPN epitaxial silicon, planar design 0.120 3.04 0.110(2.80) • Collector-emitter voltage V CE = 40V • Collector current IC = 600mA • Lead free in compliance with EU RoHS 2011/65/EU directive

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts • NPN epitaxial silicon, planar design 0.120 3.04 0.110(2.80) • Collector-emitter voltage V CE = 40V • Collector current IC = 600mA • Lead free in comply with EU RoHS 2011/65/EU directives

MMBT4401

Abstract: transistor m4a
Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .103(2.60) .086(2.20) .056(1.40) .047(1.20) • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: N EC ELECTRONICS INC Tfl T'<J3~JZ-S D Ê|bM 2?S2 S OCmiS^ 1 POWER TRANSISTOR ARRAY •EELECTRON D E V IC E ^ # ' . NPN SILICON e p i t a x i a l low speed power / / P A I 4 5 4 t r a n s is t o r H array sw it c h in g DESCRIPTION The u PA1454H Is an array of four power tran sisto rs. I t Is esp e cially

PC8119

Abstract: C10535E PDC800 PPC8119T PPC8120T PC8120T
Contextual Info: Application Note Usage and Applications of PPC8119T and PPC8120T Variable-gain High-frequency Amplifier Silicon MMIC for AGC Unit of Mobile Communications Document No. P12763EJ1V0AN00 1st edition Date Published December 1997 N 1997 Printed in Japan [MEMO]

LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
Contextual Info: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.

37470M2

Abstract: 37470M4
Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS PRELIMINARY , h M 3 7 4 7 0 M 2 -X X X S P ,M 3 7 4 7 0 M 2 A X X X S P M 3 7 4 7 0 M 4 -X X X S P .M 3 7 4 7 0 M 4 A X X X S P M 3 7 4 7 0 M 8 -X X X S P .M 3 7 4 7 0 M 8 A X X X S P ' param etric lim its are sub je t t tr, change

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

Contextual Info: bS^fiEñ QülbMflfl Gib • MITM M IT S U B IS H I M IC RO CO M PUTERS PRELIMINARY M 37471 M 2-X X X S P .M 37471 M 2A X X X S P M 37471 M 4 -X X X S P ,M 3 7 4 7 I M 4A X X X S P M 3 7 47 1 M 8 -X X X S P .M 3 7 4 71 M 8 A X X X S P Nolice:Theseare not afinal specification.Some

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

transistor T2S

Contextual Info: Information Latch-up Document No. C11959EJ2V0IF00 2nd edition Date Published July 1997 N Printed in Japan 1997 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in