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    TRANSISTOR LT 028 Search Results

    TRANSISTOR LT 028 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LT 028 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC-424000A9BA

    Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
    Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor


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    MC-424000A9, -424100A9 MC-424000A9 C-424100A9 304-word PD424100 dur005 30-Pin MC-424000A9BA) C-424000A9BA MC-424000A9BA C-424000A9BA simm 30-pin 9-bit PDF

    transistor et 454

    Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
    Text: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I


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    2SC1842 SC-43A transistor et 454 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46 PDF

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


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    2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717 PDF

    transistors 2n5913

    Abstract: 2N5913 Transistor 2n5913 423 rca transistor 423 rca 2n5913 application note 0.1 mF ceramic disc capacitor Arnold Magnetics D0028 VK200-09/3B
    Text: File No. 423 R F Power Transistors Solid State Division 2N 5913 Silicon N-P-N Overlay Transistor 1 2 .5 -V o lt, High-G ain T y p e fo r Class-C A m p lifie rs in V H F /U H F C o m m un icatio ns E q uip m en t Features: • High Power G ain , High Power Output . . .


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    2N5913 13-dB 10-dB transistors 2n5913 2N5913 Transistor 2n5913 423 rca transistor 423 rca 2n5913 application note 0.1 mF ceramic disc capacitor Arnold Magnetics D0028 VK200-09/3B PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt ­ a g e o p e ra tio n .


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    2411K 4097/2S 1741S 2SC2411K 2SC4097 I09503 0Dlb713 O-220FN O-220FN O220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1


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    2SA1036K/2SA1577/2SA854S 2SA1577 2SA1036K SC-59 SC-70 0Dlb713 O-220FN O-220FN O220FP T0-220FP, PDF

    pw510

    Abstract: H150 TC-6178
    Text: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l


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    PW510 H150 TC-6178 PDF

    transistor LT 028

    Abstract: LT 74 s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li­ cations in m ilitary and industrial equipm ent. Suitable for use as


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    O-205AD transistor LT 028 LT 74 s PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671 PDF

    LT 0206

    Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.


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    LTZ1000/LTZ1000A LTZ1000A 05ppm/ LTZ1000 LM199, LM399 LT1021 LT1236 LT1389 LT 0206 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199 PDF

    t05 package transistor pin configuration

    Abstract: Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION n The LTZ1000 and LTZ1000A are ultra-stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2 VP-P of noise and long-term stability of 2μV/√kHr.


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    LTZ1000/LTZ1000A LTZ1000 LTZ1000A 05ppm/ LM399 20VRMS LT1021 LT1236 t05 package transistor pin configuration Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode PDF

    1N4148 tempco

    Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements


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    LTZ1000/LTZ1000A 05ppm/ LTZ1000A LM399 LT1021 LT1236 LT1389 800nA, 1N4148 tempco ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000ACH PDF

    MC1466

    Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s


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    MC1466L CMH30HO: MC1466 MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L PDF

    zener diode 1n4148

    Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements


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    LTZ1000/LTZ1000A 05ppm/Â LTZ1000A LTZ1000 LT1236 LT1389 800nA, 10ppm/Â zener diode 1n4148 diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199 PDF

    CC1LK

    Abstract: M82 diode darlington pair power transistor of ic 4016 transistor pjm Monolithic Transistor Pair SMU FM IC ECG904 military TRANSISTOR MANUFACTURER symbols diagram DARLINGTON
    Text: PHILIPS E C G INC fafaSB^afi □ OCGSfi'ì fa • 17E D ECG904 GENERAL-PURPOSE TRAN SISTO R ARRAY semiconductors DIMENSIONAL OUTLINE D im e n s io n s In In c h e s and m illim e te r s Fo f.Low -Pow sr A pp lications at Frequencies fro m D C Through the V H F Range


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    ECG904 ECG904 CC1LK M82 diode darlington pair power transistor of ic 4016 transistor pjm Monolithic Transistor Pair SMU FM IC military TRANSISTOR MANUFACTURER symbols diagram DARLINGTON PDF

    SN1000

    Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


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    LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 sn1000 1000afas negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148 PDF

    LM199

    Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


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    LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 1000afa LM199 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000ACH LTZ1000CH PDF

    TRANSISTOR SE 135

    Abstract: P13TP
    Text: 5V Linear Controller/Driver Features Description The CS-8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional m ondithic regulators. The CS-8128 w ith a TIP42


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    CS-8128 TIP42 500mA, 350mV 500mA CS-8128N8 CS-8128D8 TRANSISTOR SE 135 P13TP PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s •E x te rn a l dim ensions (Unit: mm) 1 ) Low on-resistance. T + 0 .3 3 - 0.1 2) High-speed switching. *+ 0 .3 - 0.1 3) W ide SOA (safe operating area). 4) G ate-sonrce voltage gnaranteed at V gss = + 3 0 V .


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    2SK2793 O-220FN 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    117-5 VOLTAGE REGULATOR

    Abstract: LT1175 LT1175-5 LT1175CN8 LT1175CN8-5 LT1175CS8 LT1175CS8-5 LT1175IN8 LT1175IN8-5 4572 IC 8PIN
    Text: LT1175 500mA Negative Low Dropout Micropower Regulator DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ Stable with Wide Range of Output Capacitors Operating Current: 45µA Shutdown Current: 10µA Adjustable Current Limit Positive or Negative Shutdown Logic


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    LT1175 500mA O-220) LT1121 150mA LT1129 700mA LT1185 LT1521 300mA 117-5 VOLTAGE REGULATOR LT1175 LT1175-5 LT1175CN8 LT1175CN8-5 LT1175CS8 LT1175CS8-5 LT1175IN8 LT1175IN8-5 4572 IC 8PIN PDF

    pirgo 2N3054

    Abstract: No abstract text available
    Text: I ELECTRONICS INC ~ Ö 7 » T | D 0 H 3 5 t:iS DODODSS b 7 POWER TRANSISTOR ENGINEERING BULLETIN 2N3054 TYPE 2N3054, 4 AM P NP*L T E R M IN A L C O N N E C T IO N S SILICON SINGLE-DIFFUSED I BASE ? F M IT T E R CA SE CO LLECT O R SEATING "P L A N E 050 M AX*


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    D0H35t 2N3054 2N3054, D043Sc 2N3054 pirgo 2N3054 PDF

    schematic diagram induction heater

    Abstract: TRANSISTOR 1FU klixon 63-4 3 hp 1500 rpm a.c. induction motor winding data transformer dash 2 b-5 3 TERMINAL 1838 ir sensor klixon start relay motor 12v to 230v inverters circuit diagrams J103 J107
    Text: ftU E N -B R A D L E 'i Bulletin 1334 34 0 HP S e r ie s B jr ca up Senes A JVC Drives Adjustable Frequency instruction Manual Im p o rtan t User Inform ation B ecause of the v arie ty of uses for th is eq u ip m en t and because of the differences betw een th is solid s ta te eq u ip m en t and electrom echanical


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    PDF

    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


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    uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor PDF

    IC-8857

    Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
    Text: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o


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    uPA674T IEI-620) ETS14 IC-8857 fbise t460 transistor bth 200 63445-5 PDF