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    TRANSISTOR KT 801 Search Results

    TRANSISTOR KT 801 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGS-Thomson ball grid array

    Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		PDF CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver

    7939-2

    Abstract: signal path designer CB35000 Series
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		PDF CB35000 7939-2 signal path designer CB35000 Series

    256K DPRAM

    Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
    Text: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability


    Original     		PDF CB45000 256K DPRAM ST20 programmable schmitt trigger tristate nand gate

    tristate nand gate

    Abstract: HCMOS6
    Text: CB45000 SERIES  HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability


    Original     		PDF CB45000 tristate nand gate HCMOS6

    chip die npn transistor

    Abstract: No abstract text available
    Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance


    Original     		PDF

    0.25-um CMOS standard cell library inverter

    Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
    Text: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided


    Original     		PDF CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI

    VEBO-15V

    Abstract: 2SC4736 ITR07504 ITR07505
    Text: 2SC4736 Ordering number : EN3975A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • • • • Large current IC=2A . Adoption of MBIT process.


    Original     		PDF 2SC4736 EN3975A VEBO15V) VEBO-15V 2SC4736 ITR07504 ITR07505

    ST100

    Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
    Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.


    Original     		PDF CB65000 85K/mm2, 30nanoWatt/Gate/MHz/Stdload. ST100 CB55000 D950 ST10 ST20 tristate nand gate

    BPW21R

    Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al


    Original     		PDF

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    TRANSISTOR w2f sot23

    Abstract: w2f smd transistor w2f transistor sot23 w2f transistor SMD W2f SMD W2f transistor TRANSISTOR w2f w2f smd data sheet for all smd components W2F capacitor 10mf 16v
    Text: , Your Broad Line Supplier of Passive Components AVX, again in 1998, has introduced a whole series of new products. Some of these products were obtained from AVX’s acquisition of TPC and although not necessarily “New” products they are new to the AVX name.


    Original     		PDF S-SMTS15M898-N TRANSISTOR w2f sot23 w2f smd transistor w2f transistor sot23 w2f transistor SMD W2f SMD W2f transistor TRANSISTOR w2f w2f smd data sheet for all smd components W2F capacitor 10mf 16v

    LC7074M

    Abstract: DIP18 LA2230 LC7074
    Text: Ordering number:ENN4789 CMOS IC LC7074, 7074M Synchronous Error Correction IC for RDS Applications Overview Package Dimensions The LC7074 and the LC7074M are ICs for the RDS radio data system implemented by the EBU (European Broadcasting Union) and the RDBS (radio broadcast data system) implemented by the NRSC (National Radio System


    Original     		PDF ENN4789 LC7074, 7074M LC7074 LC7074M LA2230 LC7074/M DIP18

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    w2f smd transistor

    Abstract: w2f transistor sot23 TRANSISTOR w2f sot23 w2f transistor SMD W2f smd w2f transistor TRANSISTOR w2f w2f smd smd code W2F smd transistor W2F 56
    Text: What’s New At For , Your Broad Line Supplier of Passive Components AVX, again in 1998, has introduced a whole series of new products. Some of these products were obtained from AVX’s acquisition of TPC and although not necessarily “New” products they are new to the AVX name.


    Original     		PDF S-SMTS15M898-N w2f smd transistor w2f transistor sot23 TRANSISTOR w2f sot23 w2f transistor SMD W2f smd w2f transistor TRANSISTOR w2f w2f smd smd code W2F smd transistor W2F 56

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    kd226

    Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
    Text: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen


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    transistor BD 512

    Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
    Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­


    OCR Scan     		PDF 12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A

    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
    Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram

    Kt 0912

    Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968
    Text: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 Kt 0912 full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968

    tungsram

    Abstract: rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N r a d i o - television SEITE AUSGABE: OKTOBER E E 1 - 8 Der Taschenempfänger "QUARTZ - 402" setzt die Reihe der Impor­ te ähnlicher Empfänger aus der Sowjetunion fort. Abgesehen von


    OCR Scan     		PDF QUARTZ402" 145x213x73 III/18/379 tungsram rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


    OCR Scan     		PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300