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    TRANSISTOR KP Search Results

    TRANSISTOR KP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    18P4G

    Abstract: 20P2N-A M63805FP M63805KP M63805P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63805P/FP/KP 300mA M63805P/FP/KP 300mA) 18P4G 20P2N-A M63805FP M63805KP M63805P

    M63806KP

    Abstract: 18P4G 20P2N-A M63806FP M63806P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63806P/FP/KP 300mA M63806P/FP/KP 300mA) M63806KP 18P4G 20P2N-A M63806FP M63806P

    18P4G

    Abstract: 20P2N-A M63807FP M63807KP M63807P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63807P/FP/KP 300mA M63807P/FP/KP 300mA) 18P4G 20P2N-A M63807FP M63807KP M63807P

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63815P/FP/KP 300mA M63815P/FP/KP 300mA) 18P4G 20P2N-A M63815FP M63815KP M63815P 20P2N

    M63816FP

    Abstract: M63816KP M63816P 18P4G 20P2N-A
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63816P/FP/KP 300mA M63816P/FP/KP 300mA) M63816FP M63816KP M63816P 18P4G 20P2N-A

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 300mA) 18P4G 20P2N-A M63817FP M63817KP M63817P

    M63804FP

    Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P 4 digit 40 pin IC configuration

    transistor kp

    Abstract: M63802FP M63802GP M63802KP M63802P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) transistor kp M63802FP M63802P

    M63803FP

    Abstract: M63803GP M63803KP M63803P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63803P/FP/GP/KP 300mA M63803P, M63803FP, M63803GP M63803KP 300mA) M63803FP M63803P

    M63803GP equivalent

    Abstract: M63803FP M63803GP M63803KP M63803P KP400
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63803P/FP/GP/KP 300mA M63803P, M63803FP, M63803GP M63803KP 300mA) M63803GP equivalent M63803FP M63803P KP400

    M63802FP

    Abstract: M63802GP M63802KP M63802P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) M63802FP M63802P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA)

    M63804FP

    Abstract: M63804GP M63804KP M63804P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P

    M63812KP

    Abstract: M63812P M63812FP M63812GP M63812 KP300
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63812P/FP/GP/KP 300mA M63812P, M63812FP, M63812GP M63812KP 300mA) M63812P M63812FP M63812 KP300

    M63812FP

    Abstract: M63812GP M63812KP M63812P M63812 16P2Z-A
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63812P/FP/GP/KP 300mA M63812P, M63812FP, M63812GP M63812KP 300mA) M63812FP M63812P M63812 16P2Z-A

    GP 015 DIODE

    Abstract: M63813FP M63813GP M63813KP M63813P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current


    Original     		PDF M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP 300mA) GP 015 DIODE M63813FP M63813GP M63813KP M63813P

    M63814FP

    Abstract: M63814GP M63814KP M63814P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current


    Original     		PDF M63814P/FP/GP/KP 300mA M63814P/FP/GP/KP 300mA) M63814FP M63814GP M63814KP M63814P

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63816P/FP/KP 300mA M63816P/FP/KP

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 18P4G 20P2N-A M63817FP M63817KP M63817P

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63815P/FP/KP 300mA M63815P/FP/KP 18P4G 20P2N-A M63815FP M63815KP M63815P

    2n2222 2n5401 2n5551

    Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.


    OCR Scan     		PDF 14-pin 2N2222 2N2907 TPQ6600 2N2483 2N3738 TPQ6600A 2N3799 TPQ6700 2N3904 2n2222 2n5401 2n5551 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222