MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2967FS
RN2969FS
RN2968FS
RN2969FS
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RN1967FS
Abstract: RN1969FS RN2967FS RN2968FS RN2969FS
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1967FS~RN1969FS
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RN2967FS
RN2969FS
RN2968FS
RN1967FS
RN1969FS
RN2968FS
RN2967FS
RN1969FS
RN2969FS
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RN1967FS
Abstract: RN1969FS RN2967FS RN2968FS RN2969FS
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1967FS~RN1969FS
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RN2967FS
RN2969FS
RN2968FS
RN2967FS
RN2968FS
RN1967FS
RN1969FS
RN1969FS
RN2969FS
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K7 SOT323
Abstract: LDTB114GWT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB114GWT1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB114GWT1G
K7 SOT323
LDTB114GWT1G
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LDTB114GLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB114GLT1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB114GLT1G
OT-23
LDTB114GLT1G
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Untitled
Abstract: No abstract text available
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1967FS~RN1969FS
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RN2967FS
RN2969FS
RN2968FS
RN2967FS
RN2968FS
RN1967FS
RN1969FS
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transistor k7
Abstract: LDTB114GKT1G SC-89 k7 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB114GKT1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB114GKT1G
-500m
-200m
-100m
-50m-100m
-200m
SC-89
463C-01
transistor k7
LDTB114GKT1G
SC-89
k7 transistor
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RN2967CT
Abstract: No abstract text available
Text: RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 ４ １ ２ ３ 0.9±0.05
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RN2967CT
RN2969CT
RN2968CT
RN1967CT
RN1969CT
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RN2967
Abstract: RN2968 RN2969
Text: RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 ４ １ ２ ３ 0.9±0.05
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RN2967CT
RN2969CT
RN2968CT
RN1967CT
RN1969CT
RN2967
RN2968
RN2969
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Untitled
Abstract: No abstract text available
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more
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RN2967FS
RN2969FS
RN2968FS
RN2968FS
RN2967FS
RN1967FS
RN1969FS
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SC-75
Abstract: KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1
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SC-75
SC-75
KN4L3M
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KN4L3M
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION 0.8 ± 0.1 1.6 ± 0.1 • Complementary to KN4xxx
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SC-75
KN4L3M
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k72 transistor
Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Text: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.
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MPS-K20,
MPS-K21
MPS-K22
MPS-A20
MPS-K70,
MPS-K71
MPS-K72
MPS-A70
MPS-K20/MPS-K70
10VDC
k72 transistor
transistor k72
2N5143
k72 npn
TRANSISTOR C 2026
544S
K70 Package
TP6224
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transistor k70
Abstract: No abstract text available
Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar
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CMKT2207
OT-363
X10-4
X10-4
OT-363
13-November
transistor k70
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KI 2222A
Abstract: transistor 2222a sot-363 MARKING l0
Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar
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CMKT2207
OT-363
150mA,
KI 2222A
transistor 2222a
sot-363 MARKING l0
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J6 transistor
Abstract: 2SD1513 PA33 2sb1068 2sb10681
Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o
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2SD1513
2SB10681
PWS10
J6 transistor
2SD1513
PA33
2sb1068
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BCV71
Abstract: BCW71 BCV72 BCW72
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BCV71/72 BCW71/72 EPITAXIAL PLANAR NPN TRANSISTOR LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. FEATURES • Super Mini Packaged Transistor for Hybrid Circuits. • For Complementary with PNP Type BCW69/70/89.
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BCV71/72
BCW71/72
BCW69/70/89.
BCW71/72
BCV71/72
BCW71/BCV71
IC-10JUA
BCW72/BCV72
BCV71
BCW71
BCV72
BCW72
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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BFR94
Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Text: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross
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BFR94A
OT122E
BFR94A
BFR94.
BFR94
BS3C
TRANSISTOR FQ
BFR-94
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sot 23 marking code 2t
Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is
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OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT-A43
sot 23 marking code 2t
marking DG sot-23 NPN transistor
sot-23 MARKING CODE G1
MARKING NT SOT23
sot-23 l6
marking of m7 diodes
sot-23 marking LC
transistor ad 1v
m6 marking transistor sot-23
C5 MARKING TRANSISTOR
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BU2506DX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU2506DX
BU2506DX
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