Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K5A50D Search Results

    TRANSISTOR K5A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K5A50D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K5A50D

    Abstract: No abstract text available
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D 15led K5A50D PDF

    K5A50D

    Abstract: K5A50
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D 15mitation, K5A50D K5A50 PDF

    K5A50D

    Abstract: transistor K5A50D toshiba K5A50D TK5A50D K5A50 K5A5
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D K5A50D transistor K5A50D toshiba K5A50D TK5A50D K5A50 K5A5 PDF

    k5a50d

    Abstract: K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D k5a50d K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D PDF

    K5A50D

    Abstract: K5A50D DATASHEET TK5A50D K5A50 transistor K5A50D
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


    Original     		TK5A50D K5A50D K5A50D DATASHEET TK5A50D K5A50 transistor K5A50D PDF