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    TRANSISTOR K3797 Search Results

    TRANSISTOR K3797 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K3797 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3797

    Abstract: K3797 Transistor
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


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    2SK3797 k3797 K3797 Transistor PDF

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


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    2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B PDF

    K3797

    Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


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    2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) PDF

    K3797 Transistor

    Abstract: K3797 2SK3797 54V4 transistor k3797 K379
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


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    2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379 PDF

    k3797

    Abstract: K3797 Transistor K379 2SK3797
    Text: 2SK3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


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    2SK3797 k3797 K3797 Transistor K379 2SK3797 PDF