transistor K14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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TK14A55D
transistor K14A55D
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PDF
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K14A55D
Abstract: TK14A55D transistor K14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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Original
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TK14A55D
K14A55D
TK14A55D
transistor K14A55D
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PDF
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k14a55
Abstract: K14A55D TK14A55D transistor K14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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Original
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TK14A55D
k14a55
K14A55D
TK14A55D
transistor K14A55D
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PDF
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K14A55D
Abstract: TK14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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Original
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TK14A55D
K14A55D
TK14A55D
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PDF
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K14A55D
Abstract: TK14A55D transistor K14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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Original
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TK14A55D
K14A55D
TK14A55D
transistor K14A55D
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PDF
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