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    TRANSISTOR K1120 Search Results

    TRANSISTOR K1120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K1120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k1120

    Abstract: TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Unit: mm


    Original     		2SK1120 k1120 TRANSISTOR k1120 TRANSISTOR k1120 Package Toshiba 2sk1120 2SK1120 PDF

    TRANSISTOR k1120

    Abstract: k1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 2-16C1B TRANSISTOR k1120 k1120 PDF

    K1120

    Abstract: TRANSISTOR k1120 2SK1120 DATA 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 K1120 TRANSISTOR k1120 2SK1120 DATA 2SK1120 PDF

    k1120

    Abstract: TRANSISTOR k1120 2SK1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 k1120 TRANSISTOR k1120 2SK1120 PDF

    TRANSISTOR k1120

    Abstract: k1120 2SK1120 power device k1120
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1120 TRANSISTOR k1120 k1120 2SK1120 power device k1120 PDF

    k1120

    Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
    Contextual Info: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA PDF

    TRANSISTOR k1120

    Abstract: 2sk1120
    Contextual Info: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		2SK1120 TRANSISTOR k1120 2sk1120 PDF

    KN303

    Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier
    Contextual Info: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .


    OCR Scan     		KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF