TRANSISTOR K 820 Search Results

SM4 buzzer

Abstract: transistor 1 E 9 k Transistor code iz ST108 buzzer smt
Contextual Info: Composite Transistor Transistor Unit •P iezo electric Buzzer Driver R e s is ta n c e P a rt N o. RU101 Ri v a lu e r 2 k O (k n ) 10 180 VcES lc Pd (V ) (m A ) (m W ) 35 50 200 hpE M in . Typ. 150 330 M ax. 820 V CE lc (V ) (m A ) 3 50 •P ro d u c t Designation

transistor WT7

Abstract: buzzer smt transistor RU101 RU101 buzzer piezoelectric circuit piezoelectric buzzer 3V buzzer 5V DC smt a1 transistor T146 T147
Contextual Info: h 7 > v X $ / T ransistors RU101 h 7 RU101 > y ^ 5 t i - 7 h Transistor Unit Composite Transistor K:7< ^ /Piezoelectric Buzzer Driver • i'i-Jfi \ti£Hl/Dim ensions (Unit : mm) h 1) "7 V V X it r o t a $ 1 u -7 D. K 7 < ( S I ) <>H "J V u l(?)H M) I

transistor RU101

Contextual Info: Composite Transistors Transistor Unit •Piezoelectric Buzzer Driver Resistance value Part No. RU101 r2 R, k i l (k O ) 10 180 ^>FE VcES (V) (mA) Pd CmW) Min. 35 50 200 150 Typ. Max. Vce (V) lc (mA) 330 820 3 50 •Product Designation • When ordering, specify the type.

Contextual Info: RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=10 kΩ ●Mini package for easy mounting

RT3X99M

Contextual Info: RT3X99M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3X99M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=2.2 KΩ ●Mini package for easy mounting

Contextual Info: RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3XAAM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ ●Mini package for easy mounting

Contextual Info: RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3XAAM is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=4.7 KΩ

RT3X99M

Contextual Info: RT3X99M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3X99M is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=2.2 KΩ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR „ FEATURES * VCEV = 80V * High Gain * 20 Amps pulse current 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K

Contextual Info: RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3XBBM is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=10 KΩ

transistor RU101

Contextual Info: RU101 h "7 > v 7s £ /Transistors RU101 h 7 > y X $ 2 i 7 h & t f C i* i m b J7 > 5 ' Z 2 Transistor Unit (Composite Transistor) £±117+f— K 7 < 7 /Piezoelectric Buzzer Driver ' • «ft JFi'i i£El/D im ensions (Unit : mm) h V > D i K ^ ' r ^ ' i i i S f f l c A 'r T 7

3722K

Contextual Info: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K

RT2N65M

Contextual Info: RT2N65M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ⑤ ① 0.2 1.25 RT2N65M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor R1=10 KΩ

RT2N63M

Contextual Info: RT2N63M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ① ⑤ 0.2 1.25 RT2N63M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor R1=4.7 KΩ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

MDC01

Abstract: MFW14
Contextual Info: h~7>y MDC01 £ /Transistors MDC01 ^ h 7 > v ^ ii7 K Multi Device (Composite Transistor Array) i — £ K 7 -4 ^ /M o t o r Driver * i^ffi\f>il3I/Dimensions (Unit : mm) *7 >J A iiHim Jl MFW14 pin n - j 'r - 'y i . z K 7 -f JŒ1& VcE (sat) W h 7 > V X 2 5 ,

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

Contextual Info: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A

2sd1037

Abstract: GDQS441 SC-59A T146 T147 2SA1037KLN 2SA1037
Contextual Info: ROHM CO LTD h 7 > V X $ / I ransistors 40E » 2 S Â 1 0 3 7 K L N PNP Taeaw qqosmmq i birhm 2SA1037KLN - T-27- o J X - / K Frequency Low Noise Epitaxial Planar Super Mini-Mold PNP Silicon Transistor • • f t t D ffift* -? * * « 03/Dim ensions Unit : mm

T146

Contextual Info: Composite Transistors Transistor Unit •Piezoelectric Buzzer Driver Resistance value Part No. RU101 Ri k fl CkiO 10 180 R; hpE VcES (V) Ic Pd (mA) (m W ) Min. Typ. Max. VcE (V) (mA) 35 50 200 150 330 820 3 50 Ic • Product Designation • When ordering, specify the type.

Contextual Info: r& T O K O TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Pagers ■ Internal PNP Transistor ■ Personal Communication Equipment ■ Internal Shutdown Control (Off Current, 0.1 max)

MFW14

Abstract: MDC01 hFE-200 transistor PNP
Contextual Info: S ~7 > v 7. £ /Transistors M D C 0 1 w MDC01 '7;l' ^ V W * ^ h 7 > v X $ 7 K • Multi Device (Composite Transistor Array) ■î — £ K 7 < ^ / M o to r Driver ' ftH ^ & H /D iinensions (Unit : mm) 7 JU MFW14 pin v t r - 'J i Z \iy -f V c e (sat) W h- 7 > v X ?

Contextual Info: 2SA1037KLN h ~ 7 > y X ^ / T ransistors 2 1 0 3 7 S A X K L N • • «HI 1 1 yi\/~f\s—J i& Z .—A*— $ —i —^ K PNP '>• ;=]> h - 7 > v * 2 ;Jt- £Hs:lti|iffl/L o w Frequency Low Noise Epitaxial Planar Super Mini-Mold PNP Silicon Transistor \|';£IS ]/'D im en sion s (U nit : mm)

Contextual Info: FMW3/FMW4 h ~7 > V 7s $ / I ransistors i —Jls K h ‘7 > v ^ i f/Dual Mini-Mold Transistor x t ! ? * ' > 7 J l s 7 l s - i - B N P N •>lJ a > Epitaxial Planar NPN Silicon Transistor — / General Small Signal Amp. FMW3 FMW4 • W f ^ ü S I /D im e n s io n s U n it: mm