PDTA143XE
Abstract: SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ
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PDF
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M3D173
PDTA143XE
MAM345
SC-75
OT416)
SCA63
115002/00/01/pp8
PDTA143XE
SC-75
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PDTC143XE
Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ
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Original
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PDF
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M3D173
PDTC143XE
MAM346
SC-75;
OT416)
115002/00/02/pp8
PDTC143XE
PDTA143XE
SC-75
PDTA143
PDTA143X
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PDTA124XE
Abstract: PDTC124XE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ
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Original
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PDF
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M3D173
PDTC124XE
MAM346
SC-75;
OT416)
115002/00/03/pp8
PDTA124XE
PDTC124XE
SC-75
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PDTA124XE
Abstract: PDTC124XE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ
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Original
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PDF
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M3D173
PDTA124XE
MAM345
SC-75)
115002/00/03/pp8
PDTA124XE
PDTC124XE
SC-75
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PDTC114YE
Abstract: SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ
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M3D173
PDTC114YE
115002/00/03/pp8
PDTC114YE
SC-75
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BP317
Abstract: MMBTA42 MMBTA92 254-D
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN
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M3D088
MMBTA42
MMBTA92.
MAM255
603506/01/pp8
BP317
MMBTA42
MMBTA92
254-D
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MMBTA92
Abstract: BP317 MMBTA42
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN
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M3D088
MMBTA92
MMBTA42.
MAM256
603506/01/pp8
MMBTA92
BP317
MMBTA42
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PDTC123ET
Abstract: marking code 10 sot23 PDTA123JT
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ
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M3D088
PDTA123JT
MAM100
115002/01/pp8
PDTC123ET
marking code 10 sot23
PDTA123JT
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BP317
Abstract: MMBT2222A PMBT2907A
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).
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M3D088
MMBT2222A
PMBT2907A.
MAM255
603506/01/pp8
BP317
MMBT2222A
PMBT2907A
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MMBT3906 PHILIPS
Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).
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M3D088
MMBT3906
MMBT3904.
MAM256
603506/01/pp8
MMBT3906 PHILIPS
transistor MMBT3906
marking code 10 sot23
marking code ce SOT23
BP317
MMBT3904
MMBT3906
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marking code 10 sot23
Abstract: BP317 MMBT3904 MMBT3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).
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PDF
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M3D088
MMBT3904
MMBT3906.
MAM255
603506/01/pp8
marking code 10 sot23
BP317
MMBT3904
MMBT3906
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PDTA124EEF
Abstract: SC-89 BP317 PDTA124E
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each
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M3D425
PDTA124EEF
613514/01/pp8
PDTA124EEF
SC-89
BP317
PDTA124E
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BP317
Abstract: PMBT5401 PMBT5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA
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PDF
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M3D088
PMBT5401
PMBT5550.
MAM256
SCA63
115002/00/03/pp8
BP317
PMBT5401
PMBT5550
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).
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Original
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PDF
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M3D088
MMBTA42
MMBTA92.
MAM255
603506/01/pp8
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PDTC114EE
Abstract: PDTA114EE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each
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Original
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PDF
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M3D173
PDTC114EE
115002/00/04/pp8
PDTC114EE
PDTA114EE
SC-75
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PDTA123JE
Abstract: PDTC123JE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ
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PDF
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M3D173
PDTC123JE
MAM346
SC-75;
OT416)
115002/00/03/pp8
PDTA123JE
PDTC123JE
SC-75
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transistor B 764
Abstract: transistor b 745 sot26 sot363 transistor 752 transistor transistor 778 D 756 transistor transistor 746 d 772 transistor
Text: Packaging Details Page D2P A K . DPAK - Rectifier. DPAK - Transistor.
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OT-223.
OT-323.
OT-343.
OT-363.
OT-523.
OT-563.
transistor B 764
transistor b 745
sot26 sot363 transistor
752 transistor
transistor 778
D 756 transistor
transistor 746
d 772 transistor
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Untitled
Abstract: No abstract text available
Text: Is 7 > y * UMG2N/FMG2A /Transistors UMG2N FMG2A —i —JU K h " 7 > y ^ £ /D u a l Mini-Mold Transistor — NPN v ' J =l Epitaxial Planar NPN Silicon Transistor •f > / < —£ K^-T/^/Inverter Driver Xb?$^r y T • • && El/D im ensions U n it: mm 1)
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PDTC143XE
Abstract: Transistor B 886 PDTA143 PDTA143XE PDTA143X
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143XE NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 10 k£2
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OCR Scan
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PDF
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PDTC143XE
SC-75
OT416)
PDTA143XE.
115002/00/02/pp8
PDTC143XE
Transistor B 886
PDTA143
PDTA143XE
PDTA143X
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MARKING CODE ht9
Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2
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PDF
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SCA64
15002/00/01/pp8
MARKING CODE ht9
MARKING ht9 sot363
h9 marking
OT363
SOT363 marking code H9
transistor h9
MARKING HT9
SC88 SOT363 plastic package Ht9 MARKING CODE
hT9 marking
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PDTA124XE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 25 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTA124XE PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 and 47 k£2
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OCR Scan
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PDTA124XE
SC-75
OT416)
PDTC124XE.
115002/00/03/pp8
PDTA124XE
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PDTA143Z
Abstract: PDTC143Z PDTA143
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143ZT NPN resistor-equipped transistor FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 47 k£2
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PDTC143ZT
115002/00/03/pp8
PDTA143Z
PDTC143Z
PDTA143
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Transistor 63B
Abstract: KSD794 KSD794A ksb744
Text: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage : K S D 7 9 4 : KSD794A Emitter-Base Voltage
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KSD794/794A
KSB744/KSB744A
KSD794
KSD794A
O-126
D02A13D
Transistor 63B
KSD794A
ksb744
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AN 6752
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2
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PDF
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PDTA114TU
OT323)
OT323
PDTC114TU.
115002/00/03/pp8
AN 6752
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