Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K 135 J 50 Search Results

    TRANSISTOR K 135 J 50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 135 J 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1623K

    Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
    Text: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View


    Original     		PDF 2SC1623K OT-23 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B 28-Jan-2011 2SC1623K SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE

    VHB40-12F5

    Abstract: No abstract text available
    Text: VHB40-12F5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F5 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .500 6L FLG 3 2x Ø N FU LL R D 2 B MAXIMUM RATINGS E .725/18,42 F G M K H 5.0 A 36 V VCBO A 3 • PG = 9.5 dB Typ. at 40 W /175 MHz


    Original     		PDF VHB40-12F5 VHB40-12F5

    MRF644

    Abstract: No abstract text available
    Text: MRF644 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF644 is a gold metallized RF power transistor designed for 12.5 V Class-C applications in 450-513 MHz frequency range. PACKAGE STYLE .500 6L FLG A C FEATURES: E • Internal Input Matching Network


    Original     		PDF MRF644 MRF644

    2SA812K

    Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
    Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA


    Original     		PDF 2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135

    TVV030

    Abstract: ASI10660
    Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030 TVV030 ASI10660

    sd1441

    Abstract: SD-1441
    Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V


    Original     		PDF SD1441 SD1441 SD-1441

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		PDF 2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz


    Original     		PDF BLV25 BLV25

    BLV25

    Abstract: No abstract text available
    Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz


    Original     		PDF BLV25 BLV25

    Untitled

    Abstract: No abstract text available
    Text: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for


    Original     		PDF BLV25 BLV25

    ULBM45

    Abstract: ASI10685
    Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG


    Original     		PDF ULBM45 ULBM45 ASI10685

    VHB125-28

    Abstract: ASI10731 j105 transistor
    Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A


    Original     		PDF VHB125-28 VHB125-28 ASI10731 j105 transistor

    ULBM25

    Abstract: ASI10683
    Text: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is a gold metallized RF power transistor designed for 12.5 Class-C applications in 450-513 MHz frequency range. It utilizes Emitter Ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG


    Original     		PDF ULBM25 ULBM25 ASI10683

    SD1434

    Abstract: 2sd1434
    Text: SD1434 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG


    Original     		PDF SD1434 SD1434 2sd1434

    Untitled

    Abstract: No abstract text available
    Text: 2729GN-500 Rev 1 2729GN-500 500 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 12dB gain, 500 Watts


    Original     		PDF 2729GN-500 2729GN-500 55-KR 55-KR

    ASI10719

    Abstract: VHB100-12
    Text: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • • • Omnigold Metalization System FULL R D B E .725/18,42 F G MAXIMUM RATINGS 20 A IC VCBO 36 V VCEO 18 V VCES


    Original     		PDF VHB100-12 VHB100-12 ASI10719 ASI10719

    3576 transistor

    Abstract: SNA-186
    Text: SNA-186 DC-8GHz Cascadable GaAs HBT MMIC Amp October, 1995 66 Plastic Package Features - Patented GaAs HBT Technology - Cascadable 50-0hm -1.8:1 VSWR - 12dB Gain, +26dBm TOIP Operates from Single Supply • Low Cost Surface Mount Plastic Package Description


    OCR Scan     		PDF SNA-186 50-0hm 26dBm Microdevices1SNA-186 13dBm 3576 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for


    OCR Scan     		PDF MJE18009/D JF18009 MJE/MJF18009 221D-02 O-220 E69369

    transistor et 454

    Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
    Text: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )


    OCR Scan     		PDF 2SD774 2SB734 transistor et 454 B686 2SD774 pt 4115 T1IU K0559

    BUV20

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


    OCR Scan     		PDF BUV20/D BUV20 BUV20

    NPN power transistor 15A amperes

    Abstract: npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11403508 DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex
    Text: 7 2 9 4 6 2 1 POWEREX INC m t/B iE X DËTJ 75T4L.21 0D057DS 3 J~'o • r - Í 3 ~ » ? DA11/DB12 NPN Power Switching Darlington Transistor Sets Powerex, Inc., H illls Street, Youngwood, Pennsylvania 15697 412 925-7272 300-350-800 Amperes/ 400-500 Volts Features:


    OCR Scan     		PDF 0D057DS DA11/DB12 DA11403508 Amperes/400-500 NPN power transistor 15A amperes npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex

    25 ohm semirigid

    Abstract: No abstract text available
    Text: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er


    OCR Scan     		PDF UF28100M 303BRANSFORMER. UF201OOM 25 ohm semirigid

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for


    OCR Scan     		PDF MJE18009/D MJE/MJF18009 221D-02 E69369 2PHX33547C-1 JE18009/D

    2SC495

    Abstract: 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R
    Text: 496 2SA 505 A l -/V D y p N P x e ttz/P iifi& h jy y zv iP C T tt ^ S IL IC O N PNP EPITA XIA L TRANSISTOR P C T U n it 35$ PCT I j> -to Produced by Perfect Crystal Device Technology. 134 PROCESS) i n mm 2sa496 2sa505 ELECTRICAL CHARACTERISTICS (Ta = 25 t)


    OCR Scan     		PDF 2sa496 2sa505 SC496i3y7 2SC495 2SC496 AC46r" 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R