TRANSISTOR JCE Search Results

TRANSISTOR JCE Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR JCE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT	Original	2N5330 JEDECTO-61 SPT5330	PDF
C0805C225K9RACTU Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003 Text: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed	Original	AWT6222 C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003	PDF
2N3054 Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054 Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable	OCR Scan	2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054	PDF
HF 331 transistor Abstract: No abstract text available Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	BLY92A HF 331 transistor	PDF
transistor buv 90 Abstract: BCY 85 Q60203-Y66 BCY 66 Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).	OCR Scan	Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66	PDF
BFY80 Abstract: No abstract text available Text: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung	OCR Scan		PDF
BF199 Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,	OCR Scan		PDF
transistor BR 471 A Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675 Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan	N125A 626/1177A2 transistor BR 471 A be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675	PDF
transistor bf 196 Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,	OCR Scan		PDF
BFY90 Abstract: 73180 Tfk 880 BFy 90 transistor Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)	OCR Scan	-30dB BFY90 73180 Tfk 880 BFy 90 transistor	PDF
transistor bf 422 Abstract: BF 264 PNP transistor 263 BF 422 Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: CMBT4401 SILICON PLAN AR EPITAXIAL TRANSISTOR N-P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 « COLLECTOR 2.4 _L02 0.89* 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS	OCR Scan	CMBT4401	PDF
solitrondevices Abstract: 2n263 SOLITRON MC 150 transistor Text: 012 56 8368602 SDLITRON DEVICES .INC S0LITR0N DEVICES INC ti D T- Sjf_r DE\|ñ3t.ñboa oooiasb t \|~ NO. 6079/2N263V SILICON TRANSISTOR ENGINEERING DEVICE SPECIFICATION GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in a double-ended stud-mounted case*	OCR Scan	6079/2N263 p/4/63 solitrondevices 2n263 SOLITRON MC 150 transistor	PDF
transistor D 1557 Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly	OCR Scan	fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power	PDF

Untitled Abstract: No abstract text available Text: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B	OCR Scan	2N3055 2N3055 15Amp l00ohm	PDF
AF239 Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.	OCR Scan	A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A	PDF
42t sot-23 Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715	PDF
TFK 421 Abstract: tfk 423 73211 BSW89 TFK 10 tfk 536 Text: Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: S chalter Applications: Switches Besondere Merkmale: • Hohe Strom verstärkung • In G ruppen so rtie rt Features: • High current gain • In groups selected	OCR Scan	BSW89 TFK 421 tfk 423 73211 BSW89 TFK 10 tfk 536	PDF
tlk 94 Abstract: 2N2193 High Speed Switches C4752 tfk s 220 Text: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TRANSISTOR SEMICONDUCTOR RN2407, RN2408, RN2409 TnCUIDA •w w ■I I TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (RN2407) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN2407, RN2408, RN2409 RN2407) RN1407--1409 RN2407 RN2408 RN2407-2409	PDF
SH2100 Abstract: fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983 Text: SH2100 HIGH CURRENT DRIVER HYBRID CIRCUITS GENERAL DESCRIPTION - The SH 2100 Hybrid consists of a Buffer Micrologic Integrated Circuit driving a high-current NPN Planar* Epitaxial Silicon Transistor. PHYSICAL DIMENSIONS SIMILAR TO TO-5J ♦Planar is a patented Fairchild process.	OCR Scan	SH2100 FD600: 12VDC fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983	PDF
PWg300 Abstract: 2SC3466 Text: Ordering n u m b er:EN 2487A \| _ 2SC3466 NPN Triple Diffused Planar Silicon Transistor 650V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO Absolute Mali»« Ratings at Ta=25°C	OCR Scan	2SC3466 50V/8A PWg300 200uH 2SC3466	PDF
transistor BC 56 Abstract: 2SC4441 Text: Ordering number: EN 3794 No.3794 _ 2 S C 4 4 4 1 NPN Triple Diffused P lanar Silicon Transistor Very High-Definition Monocuro Display Horizontal Deflection Output Applications Features • High reliability Adoption of HVP process . • High fast.	OCR Scan	2SC4441 transistor BC 56 2SC4441	PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF

TRANSISTOR JCE Search Results

TRANSISTOR JCE Result Highlights (5)

TRANSISTOR JCE Datasheets Context Search

Untitled

C0805C225K9RACTU

2N3054

HF 331 transistor

transistor buv 90

BFY80

BF199

transistor BR 471 A

transistor bf 196

BFY90

transistor bf 422

Untitled

solitrondevices

transistor D 1557

Untitled

AF239

42t sot-23

TFK 421

tlk 94

Untitled

SH2100

PWg300

transistor BC 56

MT1115