TRANSISTOR J 6 Search Results

TRANSISTOR J 6 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723

TRANSISTOR J 6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily	Original	2N499	PDF
Untitled Abstract: No abstract text available Text: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> ' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U	Original	300MB075 300MB075	PDF
BLW60C Abstract: No abstract text available Text: , Line, J.£.i±£.ii tx >J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial	Original	BLW60C BLW60C	PDF
2C33 Abstract: IR2C33 Text: I 7-U nit 60m A Transistor Array ^ — IR2C33 I IR 2C 33 7-Unit 60mA Transistor Array Pin Connections Description The IR2C33 is a 7-circuit driver. • Features IN! [T — IN j QT IN j U IN j \| T IN ì U IN n [I IN rU G N D J 1. Output breakdown voltage BV ceo=20V (MAX.	OCR Scan	IR2C33 IR2C33 16-pin 2C33	PDF
t25000 Abstract: QM10HB-2H Text: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j	OCR Scan	QM10HB-2H E80276 E80271 t25000 QM10HB-2H	PDF
2SA675 Abstract: t430 transistor t430 T591 PA33 ss-3r Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £	OCR Scan	2SA675 2SA675 t430 transistor t430 T591 PA33 ss-3r	PDF
QM10TD-H Abstract: mitsubishi air conditioner transistor 102 QM10T Text: MITSUBISHI TRANSISTOR MODULES j QM10TD-H ! MEDIUM POWER SWITCHING USE [ _ INSULATED TYPE j CUVI10TD-H • Ic Collector cu rren t. 10A j • V c ex Collector-emitter vo ltag e . 600V ;	OCR Scan	QM10TD-H CUVI10TD-H E80276 E80271 QM10TD-H mitsubishi air conditioner transistor 102 QM10T	PDF
RX1214B150W Abstract: No abstract text available Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C	OCR Scan	bb53131 RX1214B150W RX1214B150W	PDF
IR2415 Abstract: voltage protection diode APD Array Text: 6-Unit 400mA.Darlington Transistor Array IR2415 • ' ooonaa o \| aisoJia 7-J-J . / 3 - 0 7 IR 2 4 1 5 6-Urüt 400mA Darlington Transistor Array Description The IR2415 is a 6-circuit driver with an internai negative input voltage protection diode. It is useful	OCR Scan	400mA IR2415 400mA 14-pin 130UT2 voltage protection diode APD Array	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A	OCR Scan	QM300DY-24 QM300DY-24 E80276 E80271	PDF
CA3103E Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183 Text: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays	OCR Scan	CA3146, CA3183 CA3146A, CA31B3A, CA3183* CA3146A CA3146 CA3103E ca3103 LVB 1.32 TA6103 CA3146E ca3183	PDF
MPS6560 Abstract: audio transistor Text: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage	OCR Scan	MPS6560 625mW T-29-21 100piA, 100mA, 500mA, 30MHz 100KHz audio transistor	PDF
1200 va ups circuit diagram Abstract: transistor BA RW QM15 Text: i j I MITSUBISHI TRANSISTOR MODULES I j QM150DY-24K I % j HIGH POWER SWITCHING USE j S INSULATED TYPE j j j QM150DY-24K • • • • • lc Collector current. 150A Vcex Collector-emitter voltage. 1200V hFE DC current gain.75	OCR Scan	QM150DY-24K E80276 E80271 1200 va ups circuit diagram transistor BA RW QM15	PDF
transistor ld3 Abstract: 2SK704 ld3a Text: 6427525 N E C N E C E L E C T R O N ICS I\| ELECTRONICS INC 98D 18 _I> E J 1 b L t 5 ^’ s a s J r j U 4 o o is o a ? N-CHANNEL M OS FIELD EFFECT POWER TRANSISTOR 2SK704 DESCRIPTION The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE DIMENSIONS	OCR Scan	427S25 2SK704 2SK704 T-39-11 transistor ld3 ld3a	PDF

Untitled Abstract: No abstract text available Text: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data t'- LO C \J cg 2o: e3 Emitter - t - î Sensor 1 Circuitry -o3 V 1o- -o4 GPX06992 C\J O	OCR Scan	GPX06992	PDF
KST4403 Abstract: No abstract text available Text: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C \| 1“ Characteristic i Symbol Rating 1 Unit 1 i Collector-Base Voltage \| Collector-Emitter Voltage j Emitter-Base Voltage j Collector Current Collector Dissipation	OCR Scan	KST4403 OT-23 140kHz 150mA, ST4403 -300-SC0 KST4403	PDF
33T4 Abstract: CSB834 CSD880 Text: CSD880 CSD880 NPN PLASTIC POWER TRANSISTOR Audio frequency Power Amplifier Applications Complementary CSB834 j\|f j ! ! I J * DIM MIN MAX A 14.42 16.51 B 9,63 10.67 C 3,56 4.83 0.90 E 1,15 1.40 F 3.75 3,66 G 2.29 2.79 H 2.54 3.43 J 0,56 K 12.70 14.73 L 6.35	OCR Scan	CSD880 CSD880 CSB834 000115b 33T4 CSB834	PDF
QM20TD-9 Abstract: No abstract text available Text: I MITSUBISHI TRANSISTOR MODULES ! QM20TD-9 \| MEDIUM POWER SWITCHING USE j INSULATED TYPE I I QM20TD-9 • te • VCEX • hFE Collector current. 20A j Collector-emitter voltage. 500V j DC current gain.75 j	OCR Scan	QM20TD-9 E80276 E80271 QM20TD-9	PDF
acrian RF POWER TRANSISTOR Abstract: JTDA50 JTDA50-2 Scans-00115670 Text: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for	OCR Scan	JTDA50 UTDA50 JTDA50-2 acrian RF POWER TRANSISTOR JTDA50-2 Scans-00115670	PDF
Untitled Abstract: No abstract text available Text: 7^0741 SSE D SANKEN ELECTRIC CO LT» 0000=175 60S * S A K J Silicon NPN Epitaxial Planar ☆ High hFE Transistor, Low VcEisat Transistor ☆ Switching Transistor SC4024 Application Example: DC to DC Converter, Emergency Lighting Inverter, and General Purpose	OCR Scan	SC4024 50min 300min 24typ 45x01 MT-25 T0220)	PDF
BLY94 Abstract: philips bly94 Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran	OCR Scan	002T75fl BLY94 7Z67S60 BLY94 philips bly94	PDF
BC450 Abstract: No abstract text available Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage	OCR Scan	BC450 BC450 300mA 625mW 300/iS, 100mA Nov-97	PDF
QM15 Abstract: QM150DY-24 Text: j MITSUBISHI TRANSISTOR MODULES I j Q M 150D Y-24BK j HIGH POWER SWITCHING USE j \|5;_ . INSULATED TYPE \| ._ ! j QM15QDY-24BK • Ic Collector c u rre n t. 150A » Vc e x Collector-em itter v o lta g e . 1200V	OCR Scan	Y-24BK QM15QDY-24BK E80276 E80271 QM150DY-24BK QM15 QM150DY-24	PDF
transistor c1684 Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661 Text: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from	OCR Scan	H11A1 H11A1 E90700 C1683 C1684 C1685 C1296A transistor c1684 C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1684 transistor C1661	PDF

TRANSISTOR J 6 Search Results

TRANSISTOR J 6 Result Highlights (5)

TRANSISTOR J 6 Datasheets Context Search

Untitled

Untitled

BLW60C

2C33

t25000

2SA675

QM10TD-H

RX1214B150W

IR2415

Untitled

CA3103E

MPS6560

1200 va ups circuit diagram

transistor ld3

Untitled

KST4403

33T4

QM20TD-9

acrian RF POWER TRANSISTOR

Untitled

BLY94

BC450

QM15

transistor c1684