HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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LbS3T31
LTE21025R
FO-41B)
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transistor d 13009
Abstract: IC 566 vco transistor j 13009 IC 8085 pin
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■
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UPA832TF
1S21EI2
NE856,
NE685)
UPA832TF
NE85630
NE68530
UPA835TF
UPA832TF-T1
transistor d 13009
IC 566 vco
transistor j 13009
IC 8085 pin
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pnp germanium transistor
Abstract: boonton 91-6c
Text: M IL -S-19500/77C 6 March 1968 SUPERSEDING M IL -T -19500/77B 5 Ju ly 1961 See 6 . 3. MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, P N P , GERMANIUM, LOW-POWER m tm w 1 lJtTC j oxto n o £ 1N O Î 7U T his sp e cific atio n is m an d ato ry fo r u se by a ll D e p a rt
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MIL-S-19500/77C
19500/77B
pnp germanium transistor
boonton 91-6c
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LT1817 transistor
Abstract: LT1817
Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR
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LT1817
14E1G
C01LECT0R-8ASE
LT1817 transistor
LT1817
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SN7400
Abstract: 3305 J 3305
Text: MOS LSI TMS 3304 LR-TRIPLE 66-BIT DYNAMIC SHIFT REGISTER TMS 3305 LR-TRIPLE 64-BIT DYNAMIC SHIFT REGISTER > z c > features • 5-MHz operation • T T L compatibility • Single-ended open-drain output buffers • Low power dissipation 33 < tovj description
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64-BIT
66-BIT
sn7426
SN7400
3305
J 3305
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trimpot 25k
Abstract: J 3305 potentiometer 5 pins 3305P-1-103 3305W-1-102 10 ohms potentiometer 3305P-1-102 3305W 3305W-1-500 3305p-1-101
Text: ADJUSTMENT POTENTIOMETER M odel 3 3 0 5 S in g le T u rn C o m m e rc ia l POURNS c T R IM IT * P o te n tio m e te r W ire w o u n d E le m e n t Actual Size FEATURES • Low cost commercial potentiometer 3305P • Sealed to prevent contamination from fluxing,
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3305P
3305P
3305P-1-100
305W-M00
3305P-1-20.
trimpot 25k
J 3305
potentiometer 5 pins
3305P-1-103
3305W-1-102
10 ohms potentiometer
3305P-1-102
3305W
3305W-1-500
3305p-1-101
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tms 3305
Abstract: J 3305 66-BIT
Text: T M S 3304 L R - T R I P L E 66-BIT D Y N A M I C S H I F T R E G I S T E R T M S 3305 L R - T R I P L E 64-BIT D Y N A M I C S H I F T RE GI ST ER MOS LSI features • 5-MHz operation • T T L com patibility • Single-ended open-drain output buffers •
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66-BIT
64-BIT
tms 3305
J 3305
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transistor J 3305-1
Abstract: 87115 LM2578AH S1A-T1
Text: SÔE D b S ü l l E 1! D07b727 7D? « N S C E National NATL SEMICOND LINEAR ~ 7 ^ 5 Î - / / - 3 / Semiconductor LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the
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D07b727
578A/LM2578A/LM3578A
LM1578A/LM2578A/LM3578A
LM1578A
1N5819
PE-64287.
transistor J 3305-1
87115
LM2578AH
S1A-T1
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HC 8436
Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
Text: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is
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S-8435/8436
S-8435
S-8436
RCH654
2SK1112*
RCH855
2SK1112.
HC 8436
marcon capacitor ce
marcon CE capacitor
seiko hc 1000
transistor lr 3303
CACFM
D1NS4 diode
transistor 2sC3279
S-8435 equivalent tr
2SC3279 equivalent
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BFW17A
Abstract: bfw17a philips semiconductor lem HA
Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good
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BFW17A
711Dfl2b
D04fc
0D4b025
BFW17A
bfw17a philips semiconductor
lem HA
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.
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BLX96
7ZH737
bbS3T31
-16dB)
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yto oscillator
Abstract: MC34129D
Text: MC34129 MC33129 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA High Performance Current Mode Controller HIGH PERFORMANCE CURRENT MODE CONTROLLER The MC34129 series are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These
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MC34129
MC33129
MC34129,
yto oscillator
MC34129D
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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transistor 7905
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications
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A83A marking
Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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LTE21009R
LTE21009RA
711002b
FO-41B)
LTE21009RA
A83A marking
113A db
435A
95A 640
marking 113a
transistor 81 110 w 85
MARKING 41B
marking code 41b
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MRF227
Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica
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b3b72S4
MRF227
T0-206A
O-391
MRF227
MRF227 equivalent
420 NPN Silicon RF Transistor
transistor 7905
J 420 G
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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BFR94
Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency
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bbS3T31
BFQ34
BFR94
T-33-Ã
OT-48
VCE-20V
BFR94
Ferroxcube cross reference
Ferroxcube core
BFR94A
f2nd
transistor 3305
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motorola 2198
Abstract: No abstract text available
Text: I MOT OR OL A SC XSTRS/R F 4bE D b3b?2SH □G'mSEG 7 «110Tb MOTOROLA • SEMICONDUCTOR T- 33-05 TECHNICAL DATA The RF Line NPN Silicon High Frequency Transistor 1C = 200 mA HIGH FREQUENCY TRAN SISTO R NPN SILICON . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications. L o w n oise
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110Tb
LT3014
H-121
motorola 2198
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OC1016
Abstract: SFE 1730 LTE21025R LTE21050R
Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R
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Lb53T31
LTE21025R
FO-41B)
OC1016
SFE 1730
LTE21025R
LTE21050R
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