TRANSISTOR IRF630 Search Results

IRF630B

Abstract: mosfet ac switch N-Channel MOSFET 200v n-channel mosfet transistor TRANSISTOR mosfet mosfet 45a 200v mosfet transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630B DESCRIPTION •Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed

power relay N-channel mosfet

Abstract: IRF630N N-Channel MOSFET 200v UPS RELAY CIRCUIT mosfet High-Speed Switching mosfet low idss n-channel mosfet transistor low power TRANSISTOR mosfet transistor irf630n mosfet low vgs
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630N DESCRIPTION •Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed

irf630

Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid

irf630

Abstract: pin detail irf630 irf630 datasheet for IRF630 IRF630 Transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company N-CHANNEL ENHANCEMENT MODE FIELD EFFECT POWER TRANSISTOR IRF630 TO-220 Plastic Package High Switching Speed, Low Static Drain-Source On Resistance ABSOLUTE MAXIMUM RATINGS Ta=25oC unless specified otherwise

200v mosfet

Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
Contextual Info: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER

low igss

Abstract: TO-220f Package TRANSISTOR mosfet irf630f 200v mosfet mosfet NA n mosfet low vgs N-Channel MOSFET 200v mosfet low vgs
Contextual Info: INCHANGE MOSFET IRF630F N-channel mosfet transistor ‹ Features ・With TO-220F package ・Low on-stateand thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source 123 ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER

Contextual Info: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-

Contextual Info: ^>£.m.l-C.ond\jLC.toi LPioducti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630N 0(2) DESCRIPTION • Drain Current -ID=9.3A@ TC=25°C • Drain Source Voltage: VDSS= 200V(Min)

IRF630

Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630FI IRF630 p for IRF630
Contextual Info: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ VDSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

IRF630 MOTOR CONTROL CIRCUIT

Contextual Info: IRF630 IRF630FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE IRF630 IRF630FI • ■ ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.4 Ω < 0.4 Ω 10 A 6A TYPICAL RDS(on) = 0.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)

SEC irf630

Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
Contextual Info: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

IRF630

Abstract: IRF630 MOTOR CONTROL CIRCUIT irf630 n channel transistor IRF630
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 3 0 IR F 6 3 0 FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E IRF630 IRF630FI V dss RDS on Id 200 V 200 V < 0.4 a < 0.4 a 10 A 6 A . TYPICAL RDS(on) = 0.25 Q. AVALANCHE RUGGED TECHNOLOGY

rf630

Abstract: IRF630 MOTOR CONTROL CIRCUIT
Contextual Info: *57 S G S -T H O M S O N IR F 630 ilLHCTIKMDe IRF630FI N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PR EL IM IN A R Y D A T A T YPE IRF630 IRF630FI • . . ■ ■ V dss R DS on Id 200 V 200 V < 0.4 a < o.4 a 10 A 6 A TYPICAL RDS(on) = 0.25 Q

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

SEC irf630

Contextual Info: J.E.IIS.U ^E.ml-L.onaucko'i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200,150 VOLTS "DS(ON) = 0.4 n N-CHANNEL [RUT CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS)

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

OF4455

Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

12V to 300V dc dc converter step-up

Abstract: BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530
Contextual Info: Products Selection Guide www.belling.com.cn Index of Part Number 型号索引 Control & Driver 驱动控制类 Counter, CD/DVD, Relay, Stepped motor, Brushless motor, etc（机电驱动） LCD display driver（液晶显示驱动） Digital Appliances 数字家电类