TRANSISTOR IMA Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .

LIMITING INRUSH CURRENT npn

Contextual Info: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

mc3356p

Abstract: motorola transistor array 14 pin dip
Contextual Info: g MOTOROLA — General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. GENERAL PURPOSE TRANSISTOR ARRAY

Transistor C G 774 6-1

Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers

2SK2541

Abstract: MEI-1202 MF-1134
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET D EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SK1198

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor

2sj460

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SJ460

Abstract: MEI-1202 X10679E
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

C10535* MANUAL NEC

Abstract: 2SJ461 C10535E MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SJ460

Abstract: MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: MAPL-000978-0075LF MAPL-000978-0075LN M/A-COM Products Released, 23 Jun 09 LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation

DB978

Contextual Info: MAPL-000978-0075LF MAPL-000978-0075LN LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty M/A-COM Products Released, 23 Jun 09 Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

SQD65BB75

Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.

rf amplifier marking catalog

Contextual Info: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram

All similar transistor

Abstract: transistor marking AM philips transistor marking
Contextual Info: Philips Semiconductors; MX1011B200Y; Microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B200Y; Microwave power transistor General Description Blockdiagram Products & packages

rf amplifier marking catalog

Contextual Info: Philips Semiconductors; MX0912B351Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX0912B351Y; NPN microwave power transistor General Description Blockdiagram

Philips top MARKING CODE

Contextual Info: Philips Semiconductors; MX1011B700Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B700Y; NPN microwave power transistor General Description Blockdiagram

Contextual Info: TRANSISTOR M O D U L E S - IS O L A T E D T Y P E SQD50ABKX) SQD50AB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo=I000V, 5 2 ± 0 .3 6mir>. 6min,