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    TRANSISTOR IC 1A DATASHEET Search Results

    TRANSISTOR IC 1A DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    TRANSISTOR IC 1A DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TS16949

    Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 TX75248, TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC PDF

    FMMT591TA

    Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


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    FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp PDF

    marking 1F7

    Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


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    ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 marking 1F7 ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement


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    FMMT491 500mW FMMT591 FMMT491TA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


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    FMMT591 500mW FMMT491 FMMT591TA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


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    ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 PDF

    TS16949

    Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 TS16949 ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 PDF

    4018 datasheet

    Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
    Text: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 4018 datasheet ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA marking 312 SOT23 zetex PDF

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


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    ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 PDF

    ZXTN25100CFH

    Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


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    ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 ZXTN25100CFH design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA
    Text: ZXTP25100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 1A VCE(sat) < -225mV @ 1A RCE(sat) = 155m⍀ PD = 2.4W Complementary part number ZXTN25100DZ Description C Advanced process capability and package design have been used to


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    ZXTP25100CZ -100V -225mV ZXTN25100DZ D-81541 TS16949 ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA PDF

    FCX591A

    Abstract: FCX591ATA Diodes Incorporated 17-33 FCX491A 17-33 sot89
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • BVCEO > -40V IC = -1A Continuous Collector Current Low saturation voltage VCE sat < -500mV @ -1A


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    FCX591A -500mV FCX491A AEC-Q101 J-STD-020 DS33062 FCX591A FCX591ATA Diodes Incorporated 17-33 FCX491A 17-33 sot89 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


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    2SA2094 2SC5866 SC-96) R1102A PDF

    Diodes Incorporated 17-33

    Abstract: FCX491A all diodes ratings FCX491ATA FCX591A MARKING N2 DIODES incorporated
    Text: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > 40V High current capability IC = 1A Low saturation voltage VCE(sat) < 500mV @ 1A


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    FCX491A 500mV FCX591A J-STD-020 FCX491ATA FCX491A-7 DS33055 Diodes Incorporated 17-33 FCX491A all diodes ratings FCX491ATA FCX591A MARKING N2 DIODES incorporated PDF

    ZXTN25100CFH

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25100CFH 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A VCE sat < -220mV @ -1A


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    ZXTP25100CFH -100V -220mV ZXTN25100CFH AEC-Q101 J-STD-020 MIL-STD-202, DS33758 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2040F 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 1A


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    ZXTN2040F 500mV ZXTP2041F AEC-Q101 J-STD-020 MIL-STD-202, DS33668 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > -60V IC = -1A high Continuous Current Low saturation voltage VCE sat < -600mV @ -1A


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    FZT591 OT223 -600mV FZT491 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33142 PDF

    FCX591ATA

    Abstract: Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > -40V High current capability IC = -1A Low saturation voltage VCE(sat) < -500mV @ -1A


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    FCX591A -500mV FCX491A J-STD-020 FCX591ATA FCX591A-7 DS33062 FCX591ATA Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking PDF

    FCX591A

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -40V Maximum Continuous Current IC = -1A Low saturation voltage VCE sat < -500mV @ -1A


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    FCX591A -500mV FCX491A AEC-Q101 J-STD-020 MIL-STD-202, FCX591A DS33062 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > 40V High current capability IC = 1A Low saturation voltage VCE(sat) < 500mV @ 1A


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    FCX491A 500mV FCX591A J-STD-020 FCX491ATA FCX491A-7 DS33055 PDF