Understanding Small Microcontrollers
Abstract: 511 MOSFET TRANSISTOR motorola bel 187 transistor dwa 108 a M68HC05 microcontroller pacemaker dwa 108 MC68HC16Y1 TRANSISTOR BC 187 00FF
Text: M68HC05TB/D Rev. 2.0 HC 5 M68HC05 Family Understanding Small Microcontrollers Acknowledgment James M. Sibigtroth, a principal member of the technical staff at Motorola, is author of this text book. He is based in Austin, Texas. The author wishes to acknowledge Gordon Doughman for
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M68HC05TB/D
M68HC05
Understanding Small Microcontrollers
511 MOSFET TRANSISTOR motorola
bel 187 transistor
dwa 108 a
microcontroller pacemaker
dwa 108
MC68HC16Y1
TRANSISTOR BC 187
00FF
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binary numbers multiplication in scheme programming
Abstract: digital pacemaker 3 phase inverter 180 conduction mode theory 3-1/2 Digit Analog-to-Digital Converters sta 741 a microcontroller pacemaker tic 122 rtss 159 MC68HC16Y1 ic b 0347
Text: M68HC05TB/D Rev. 2.0 HC 5 M68HC05 Family Understanding Small Microcontrollers James M. Sibigtroth R E Q U I R E D Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola
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M68HC05TB/D
M68HC05
binary numbers multiplication in scheme programming
digital pacemaker
3 phase inverter 180 conduction mode theory
3-1/2 Digit Analog-to-Digital Converters
sta 741 a
microcontroller pacemaker
tic 122
rtss 159
MC68HC16Y1
ic b 0347
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M68HC05TB
Abstract: DIODE Z1 04 833 motorola internal diagram of 76810 transistor equivalents for bel 187 dwa 108 dwa 108 a bel 187 transistor FTH A 001 26 10 MC68HC16Y1 TIC 122 Transistor datasheet
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. M68HC05TB/D Rev. 2.0 HC 5 M68HC05 Family Understanding Small Microcontrollers For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.
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M68HC05TB/D
M68HC05
M68HC05TB
DIODE Z1 04 833 motorola
internal diagram of 76810
transistor equivalents for bel 187
dwa 108
dwa 108 a
bel 187 transistor
FTH A 001 26 10
MC68HC16Y1
TIC 122 Transistor datasheet
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Untitled
Abstract: No abstract text available
Text: S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : DATE : BIPOLAR TRANSISTOR 2 S C 4 5 3 8 R F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAM E APPROVED Fuji Electric Cojjtd CHECKED 1/12 Y 0257-R-004a
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2SC4538R
0257-R-004a
0257-R-0
0257-R-003a
0257-R
2SC4558R
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AN5337 ca3028
Abstract: CA3028A transistor hh 004 circuits diagram transistor hh 004 CA3053M
Text: H A R R IS S E N IC O N D SECTOR L IE ¡ss h a r r is • M 3D B B 71 O D i+ b 'ìS a 1 1 7 H H A S CA3028, CA3053 S E M I C O N D U C T O R March 1993 D Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz Features Description
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CA3028,
CA3053
120MHz
CA3028
CA3028A
CA3028B
120MHz.
AN5337 ca3028
transistor hh 004 circuits diagram
transistor hh 004
CA3053M
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Untitled
Abstract: No abstract text available
Text: I 1 N AUER PHILIPS/DISCRETE bTE D bb53^31 0027741 141 APX B fX 3 U SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter Collector-emitter voltage (open base)
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BFX30
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D-25CF
Abstract: 3909
Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 BUK 539-60A PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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39-60A
7110SEb
01i-state
T-39-09
BUK539-60A
711DfiSb
0044b78
D-25CF
3909
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6822 TRANSISTOR equivalent
Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
Text: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .
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2N3055
6822 TRANSISTOR equivalent
transistor T009
transistor W1A 93
TRANSISTOR NPN 6822
TRANSISTOR 434
transistor w1a 84
w1a 02 transistor
transistors 6822
CECC50000
cecc00200
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Untitled
Abstract: No abstract text available
Text: Sept. 1995 Edition 1.0a FUJITSU Data Sheet MB54501 FRONT-END UP/DOWN CONVERTER INTRODUCTION The Fujitsu MB54501 includes a iow-noise amplifier and a mixer, which are used for front end of mobile telecommunication systems. Using Fujitsu’s advanced technology, MB54501 achieves an Icc of 6.0mA typ. .
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MB54501
MB54501
FP-16P-M05
878MHz
1000p
788MHz
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transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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BUW64C
Abstract: BUW64A RCA-BUW64A 2n6354 H 6 31948 BUW64B transistor jcs CA37
Text: BUW64A, BUW64B, BUW64C HARRIS SEMICOND SECTOR File Number SbE D • 4302271 High-Current, Silicon N-P-N VERSAWATT Transistors 0G407n 1199 443 « H A S TERM INAL DESIGNATIONS Switching Applications Features: ■ Fast switching speed at temperatures up to 125° C
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BUW64A,
BUW64B,
BUW64C
7T35-/?
00407n
O-220AB
RCA-BUW64A,
BUW64C
BUW64A
RCA-BUW64A
2n6354
H 6 31948
BUW64B
transistor jcs
CA37
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IR2154
Abstract: transistor 800A 711 IR2154S igbt driver with 555 timer
Text: fritemational S I Rectifier Data Sheet No. PD-6.063 IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout
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IR2154
MS-012AA.
IR2154
transistor 800A 711
IR2154S
igbt driver with 555 timer
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transistor c1684
Abstract: No abstract text available
Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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MCT272
MCT272
MCT9001
transistor c1684
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TIP308
Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC
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b3b7254
TIP29
T1P29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
TIP308
woy transistor
transistor tip 30c
tip 30
tip 30c
tip 147 TRANSISTOR
motorola tip29
LSE 0405
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transistor 41 74t
Abstract: smd TRANSISTOR 27e
Text: d U A L I T Y - T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E ì> 74bhfl51 □ □ □ 3 5 5 1 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS _ T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z PACKAGE DIMENSIONS ifil DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide
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74bhfl51
T-41-83
MCT2200/0Z
MCT2201/1Z
MCT2202/2Z
MCT2200,
MCT2201
MCT2202
MCT2200â
MCT2201â
transistor 41 74t
smd TRANSISTOR 27e
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Untitled
Abstract: No abstract text available
Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62
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Q0G34SS
H11D1/1Z
H11D2/2Z
H11D3/3Z
H11DX
H11D1-D2,
H11D3,
MCT9001
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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SMD Transistor AFR
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bbfl51
T-41-83
MCT277
MCT277
C2090
15pseconds
MCT9001
SMD Transistor AFR
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smd TRANSISTOR 27e
Abstract: TRANSISTOR SMD a38 smd 27E
Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.
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QQ03M37
CNY17F1/1Z
CNY17F2/2Z
CNY17F3/3Z
CNY17
CNY17F1:
CNY17F2:
CNY17F3:
E50151
ii54i
smd TRANSISTOR 27e
TRANSISTOR SMD a38
smd 27E
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Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
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S7E SMD TRANSISTOR
Abstract: No abstract text available
Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bfciÃ
MCT275
MCT275
MCT9001
S7E SMD TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: dUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES e S7E D 7 4 h b Ö S 1 000354*1 4 PHOTOTRANSISTOR OPTOCOUPLERS T—41-83 MCT276 PACKAGE DIMENSIONS db The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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MCT276
MCT276
m-78T
C2079
MCT9001
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C1685
Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,
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74bbflSl
0GQ3577
MCT62
MCT61
MCT66
16-pin
C2091
MCT9001
C1685
C1685 transistor
transistor c1684
smd TRANSISTOR 27e
an c1685 transistor
SMD Transistor 1c
C1636
C1685 R transistor
C1681
C1296A
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a36 smd transistor
Abstract: transistor smd 4z
Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED
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bfl51
CNY17-1/1Z
Y17-3/3Z
Y17-2/2Z
Y17-4/4Z
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
CNY17-4:
a36 smd transistor
transistor smd 4z
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