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    TRANSISTOR H23 Search Results

    TRANSISTOR H23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KSC2328A

    Abstract: VCBO-30V
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 2328S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:C080BJ-03 芯片厚度:240±20µm 管芯尺寸:800x800µm 2 焊位尺寸:B 极 124×124µm 2;E 极 221×110µm 2


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    2328S 100mm C080BJ-03 KSC2328AH2328S 10mAIB 30VIE 500mA KSC2328A VCBO-30V PDF

    unijunction

    Abstract: AN-H23 rapid discharge mosfet circuit the mosfet unijunction application note
    Text: BACK HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs To discharge the delay capacitor, many schemes can be used. Two of the simplest are to use a diode from shutdown to VDD though this can be disrupted by very short drops in power or to


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    AN-H23 2N6027 1N4148 HV912 2N6027 unijunction rapid discharge mosfet circuit the mosfet unijunction application note PDF

    "Programmable Unijunction Transistor"

    Abstract: programmable unijunction transistor 1N4148 2N6027
    Text: HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs To discharge the delay capacitor, many schemes can be used. Two of the simplest are to use a diode from shutdown to VDD though this can be disrupted by very short drops in power or to


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    AN-H23 1N4148 HV912 2N6027 "Programmable Unijunction Transistor" programmable unijunction transistor 1N4148 2N6027 PDF

    programmable unijunction transistor

    Abstract: 1N4148 2N6027 energy discharge capacitor
    Text: HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs To discharge the delay capacitor, many schemes can be used. Two of the simplest are to use a diode from shutdown to VDD though this can be disrupted by very short drops in power or to


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    AN-H23 HV912 2N6027 programmable unijunction transistor 1N4148 2N6027 energy discharge capacitor PDF

    Programmable Unijunction Transistor

    Abstract: 2N6027 CIRCUIT unijunction application note capacitor value calculation mosfet triggering circuit "Programmable Unijunction Transistor" .47k capacitor 2N6027 DIODE 0.7v MOSFET DATA BOOK
    Text: HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs To discharge the delay capacitor, many schemes can be used. Two of the simplest are to use a diode from shutdown to VDD though this can be disrupted by very short drops in power or to


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    AN-H23 HV912 2N6027 Programmable Unijunction Transistor 2N6027 CIRCUIT unijunction application note capacitor value calculation mosfet triggering circuit "Programmable Unijunction Transistor" .47k capacitor 2N6027 DIODE 0.7v MOSFET DATA BOOK PDF

    2n6027 PUT

    Abstract: AN-H23 Programmable Unijunction Transistor unijunction application note 2N602 "Programmable Unijunction Transistor" 2N6027 1N4148 PUT 2N6027 2N*027
    Text: AN-H23 Application Note Avoiding Turn-on Oscillations in the HV91 Family of PWM ICs Introduction Since there is no hysteresis in the undervoltage shutdown in the Supertex HV91 series of converters, there may be situations where insufficient power is provided to the VDD


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    AN-H23 2n6027 PUT AN-H23 Programmable Unijunction Transistor unijunction application note 2N602 "Programmable Unijunction Transistor" 2N6027 1N4148 PUT 2N6027 2N*027 PDF

    2N602

    Abstract: 2N6027 PUT specifications 2N6027 REPLACEMENT unijunction application note 2n6027 2N6027/BT131 REPLACEMENT
    Text: HV91 Series Application Note AN-H23 Avoiding Turn-on Oscillations in HV91 Family PWM ICs Since there is no hysteresis in the undervoltage shutdown in the Supertex HV91 series of converters, there may be situations where insufficient power is provided to the VDD terminal of the


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    AN-H23 HV912 2N6027 2N602 2N6027 PUT specifications 2N6027 REPLACEMENT unijunction application note 2n6027 2N6027/BT131 REPLACEMENT PDF

    TRANSISTOR D 880

    Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
    Text: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1


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    LED55B LED55C LED56 LED56F QEB421 QEC113 QEC122 QED123 QED222 QED233 TRANSISTOR D 880 H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor PDF

    US6H23

    Abstract: transistor h23
    Text: US6H23 Transistors Dual digital transistors US6H23 zDimensions Unit : mm TUMT6 0.2Max. zFeatures In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits.


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    US6H23 600mA. US6H23 transistor h23 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    J1926-2

    Abstract: J1926 6 pin connector sae connector 2 pin transistor g15 1P H transistor
    Text: PS98 - Solid State Pressure Switch PRESSURE SWITCHES      New! 0 to 6000 psi and 0 to 400 bar No Moving Parts Highly Resistant to Shock and Vibration Long Cycle Life Ideal for Off-Highway, Mobile, Demanding Applications Answering the demand for solid-state switches, Gems proudly offers the


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    -M012) J1926-2 J1926 6 pin connector sae connector 2 pin transistor g15 1P H transistor PDF

    Photocoupler Q 817

    Abstract: 727 thyristor PHILIPS WIDEBAND HYBRID IC MODULES transistor 33725 DIODE S4 74 vo 727 z-diode philips catv 860 amplifier ic SNW-EQ-611 tunnel diode GaAs philips OPTICAL PICK-UP
    Text: GENERAL page Quality Pro Electron type numbering system Rating systems Letter symbols CATV parameters Appendix A - Common frequency sets for ddim measurements Appendix B - Common frequency sets for d2 measurements Appendix C - Distortion results using the CENELEC


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    omron plc CPU 41 e rs232 pin configuration

    Abstract: transistor f422 PYC35 RGB 5050 IP65
    Text: Panel Builder Guide 2014 Components for panels and cabinets industrial.omron.eu Welcome to our world Our best-in-class devices for your panels and cabinets Welcome to Omron’s world of advanced industrial automation. The PANEL BUILDER GUIDE is your essential tool to pre-select


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    Y209-EN2-02A PanelBuilderGuide2014 omron plc CPU 41 e rs232 pin configuration transistor f422 PYC35 RGB 5050 IP65 PDF

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


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    CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot PDF

    golf cart motor circuits

    Abstract: 2SC3866 transistor 2SD921 2sc3866 equivalent 2SC3866 sewing motor ET382 2SC3030 2SC3505 2SC3549
    Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e


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    30kHz 2SC3505 O-220F17 2SD2047 2SC3866 2SC3549 O-220AB 2SD1158 golf cart motor circuits 2SC3866 transistor 2SD921 2sc3866 equivalent sewing motor ET382 2SC3030 PDF

    2SC4538 equivalent

    Abstract: 2sc3866 equivalent 2SC3030 2SC3505 2SC3549 2SC3866 2SC4419 2SC4538 2SD2431 2SD1049
    Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e


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    30kHz 2SC3505 O-220F17 2SD2047 2SC3866 2SC3549 O-220AB 2SD1158 2SC4538 equivalent 2sc3866 equivalent 2SC3030 2SC4419 2SC4538 2SD2431 2SD1049 PDF

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


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    PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC SIDELOOKER PAIR 8PT9 Ëi ECTROlfC 5 H23A1/2 SECTION X~X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting cfiode and a silicon phototransistor. The clear epoxy packaging systern is designed to optimize the mechanical


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    H23A1/2 ST1342 5T1221 ST1222 PDF

    st1221

    Abstract: H23A1
    Text: [sO PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS I? Ef — D— - 1-1 — !— SECTION X-X LEAD PROFILE DESCRIPTION The H23A is a m atched em itter-detector pair which consists of a gallium arsenide infrared em itting diode and


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    H23A1/2 H23A1 H23A2 ST1221 st1221 PDF

    H23A1

    Abstract: H23A2
    Text: PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 ¡P A C K A G E DIMBNSIONg - D — — |— — 1 1— E f T - j ¿ h — i - H o ti i •— > —• % + T 1 H f' X L SYMBOL SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which


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    H23A1/2 ST1220 H23A1 H23A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging


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    H23A1/2 ST1342 ST1220 ST1221 ST1222 4bbfl51 PDF

    darlington bd 876

    Abstract: transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd
    Text: esc D a i fi23St.0S 0 0 0 4 4 2 3 7 H S IE 6 ^ PNP Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF h23 T-33-31 * BD 876 BD 878 BD 880 ° BD 876, BD 878, and BD 880 are epitaxial PNP silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . These darlington transistors


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    A23Sfc QQ044S3 T-33-31 Q62702-D908 Q62702-D907 Q62702-D906 Q62902-B63 Q62902-B62 125min darlington bd 876 transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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