TRANSISTOR GTO Search Results

Contextual Info: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: 7*^ 12 4 3 TRANSISTOR MODULE 00021 37 4AA QCA30B/QCB3QA40/60 UL;E76102(M QCA30B and QCB30A are dual Darlin­ 94max gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

6002 transistor

Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
Contextual Info: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

QCA30B40

Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Contextual Info: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

100-A60

Abstract: transistor k 620 transistor K 603 k 30 transistor OBB100A40 transistor 603 603 transistor k100a sanrex
Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 Q C A 10 0 A and Q B B 1 OOA a dual D a rlin ­ gton power transistor module w ith two high sp«?d. high power D arlington transis­ tors. Each transistor has a reverse p a ra l­ leled fast recovery diode. • QCAIQOA*-Series-connected type

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

2FK transistor

Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

SOT-23 2xk

Abstract: 2xk transistor npn
Contextual Info: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

2FK transistor

Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

2tk transistor

Contextual Info: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

BU806..807

Abstract: BU806 BU807
Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110°° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

FT5753M

Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
Contextual Info: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or

MARKING 1PK

Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
Contextual Info: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage

Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage

2AK TRANSISTOR

Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

Contextual Info: KST2222 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCW31

Abstract: KST5088
Contextual Info: BCW31 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol