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    TRANSISTOR GHZ Search Results

    TRANSISTOR GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original     		PDF 2SC3587 2SC3587 PT 4304 a transistor noise diode

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor

    BFG97

    Abstract: BFG31 TRANSISTOR BFg97 sc7313
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 BFG97 BFG31 TRANSISTOR BFg97 sc7313

    bfg97

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97

    thickness of microstripline

    Abstract: BFG31 BFG97 MBB773
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. thickness of microstripline BFG31 BFG97 MBB773

    BFR540

    Abstract: MSB003 BFR540 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a


    Original     		PDF BFR540 BFR540 MSB003 BFR540 philips

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		PDF BFS17 MSB003 R77/02/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


    Original     		PDF BFG35 OT223 MSB002 OT223. R77/03/pp14

    marking code W1

    Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35

    4 npn transistor ic 14pin

    Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
    Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation


    Original     		PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY

    BFS17

    Abstract: NXP BFS17 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17 MSB003 R77/02/pp8 BFS17 NXP BFS17 MSB003

    BFS17A

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A September1995 MSB003 BFS17A MSB003

    TRANSISTOR GENERAL DIGITAL L6

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


    Original     		PDF BFG35 OT223 BFG35 MSB002 OT223. R77/03/pp14 771-BFG35-T/R TRANSISTOR GENERAL DIGITAL L6

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


    Original     		PDF BFQ19 BFQ19

    BFT25

    Abstract: MSB003 MEA909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23


    Original     		PDF BFT25 MSB00ny BFT25 MSB003 MEA909

    2SC3603

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3587

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500

    TP3400

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output


    OCR Scan     		PDF TP3400 TP3400