TRANSISTOR GAN Search Results

Contextual Info: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

GaN TRANSISTOR

Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
Contextual Info: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Contextual Info: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

CHK040A-SOA

Abstract: CHK-04
Contextual Info: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

MAGX-000035-100000

Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
Contextual Info: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

MAGX-003135-120L00

Abstract: 003135 EAR99
Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

transistor GaN

Contextual Info: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching

Transistor TL 31 AC

Abstract: j142
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

MAGX-000035

Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

EAR99

Abstract: HEMT 36 ghz transistor
Contextual Info: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

SGA-9089Z

Abstract: InP HBT transistor low noise
Contextual Info: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SGA9289Z

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

HEMT 36 ghz transistor

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

MAGX-003135-030L00

Contextual Info: MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Gan on silicon

Abstract: 960-1215MHz jtids amplifier 250W MAGX-000
Contextual Info: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

MAGX-000912-125L00

Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000
Contextual Info: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration