TRANSISTOR G9 Search Results

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

tyco igbt

Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214
Contextual Info: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

tyco igbt

Abstract: igbt tyco V23990-P501-F
Contextual Info: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

Response AA0482

Abstract: 49/Response AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.

marking A1 TRANSISTOR

Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

q901

Contextual Info: Transistors Digital Transistor Common Emitter Dual Transistors UMG9N/FMG9A •Features 1) Two DTC114E digital transistors in a UMT, SMT package. 2) M ounting cost and area can be cut in half. •S tructure Epitaxial planar type NPN silicon transistor (Built-in resistor type)

pulse transformer 4502

Abstract: c1946 hcpl 4502 4502
Contextual Info: HIGH-SPEED TRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES HCPL-2503 HCPL-4502 6N136 6N135 PACKAGE DIMENSIONS ft DESCRIPTION The HCPL-4502/HCPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.

XC6SLX16-CSG324

Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

1e47

Abstract: BUK638-500B SI3090
Contextual Info: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in

Contextual Info: FMG9A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SM T5 (FMT, SC-74A) packages • package marking: G9 • package contains two interconnected NPN digital transistors (DTC114EKA) 2.9 ± 0.2 1.9 ± 0 .2

2SD1312

Abstract: w18 transistor
Contextual Info: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o

Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

CHDTC114E

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMG9PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

CHEMG9GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 * High current gain.

transistor 9721

Abstract: 9721 mosfet to3
Contextual Info: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

T3D 87

Abstract: t3d 99 G-100 IRGMC50U
Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: PD - 9.695A International IM lRectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency