TRANSISTOR G16 Search Results
TRANSISTOR G16 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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LM395T/NOPB |
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Ultra Reliable Power Transistor 3-TO-220 0 to 125 |
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ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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LP395Z/NOPB |
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Ultra Reliable Power Transistor 3-TO-92 -40 to 125 |
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TRANSISTOR G16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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code marking NEC
Abstract: date code marking NEC g1683
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PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683 | |
uPA2715
Abstract: UPA2715GR M15022
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PA2715GR PA2715GR uPA2715 UPA2715GR M15022 | |
dc m13
Abstract: PT22
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PA2718GR PA2718GR dc m13 PT22 | |
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2719GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook |
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PA2719GR PA2719GR | |
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook |
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PA2717GR PA2717GR | |
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook |
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PA2715GR PA2715GR | |
g1630
Abstract: SOP8 mos n PA2702GR UPA2702G
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PA2705GR PA2702GR g1630 SOP8 mos n UPA2702G | |
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter |
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PA2706TP PA2706TP, | |
SOP8 mos nContextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA2703GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2703GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 |
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PA2703GR PA2703GR SOP8 mos n | |
SOP8 mos n
Abstract: nec 14-A
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PA2704GR PA2704GR SOP8 mos n nec 14-A | |
upa650
Abstract: marking WD
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PA650TT PA650TT upa650 marking WD | |
M140 diodeContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. |
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PA2716GR PA2716GR M140 diode | |
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 1, 2, 3 ; Source 4 ; Gate |
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PA2706GR PA2706GR | |
PA2717GRContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. |
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PA2717GR PA2717GR | |
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PA2755GRContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2755GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. |
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PA2755GR PA2755GR | |
XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
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DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL | |
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) |
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PA653TT PA653TT | |
PA2718GRContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. |
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PA2718GR PA2718GR | |
D1207
Abstract: 25A45
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PA651TT PA651TT D1207 25A45 | |
U6000Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. |
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PA2452 PA2452 U6000 | |
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. |
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PA2706TP PA2706TP, 30ems, | |
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1806 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1806 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and |
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PA1806 PA1806 | |
uPA677TBContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent |
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PA677TB PA677TB SC-70 uPA677TB | |
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1807 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1807 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and |
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PA1807 PA1807 |