TRANSISTOR G11 Search Results

TRANSISTOR G11 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR G11 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1030mhz Abstract: 2TD12 HV400 SM200 1090mhz Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed	Original	HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz	PDF
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11	PDF
PMBTH10 Abstract: MSB003 PMBTH81 MRA566 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost	Original	PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566	PDF
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23	PDF
mbb400 Abstract: BF747 MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 mbb400 BF747 MSB003	PDF
70V AC to 48v dc 40 amp converter circuit diagram Abstract: No abstract text available Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode	Original	LT3781 350kHz 300kHz LT3710 LTC3728 550kHz, 3781f 70V AC to 48v dc 40 amp converter circuit diagram	PDF
GHM3045 Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3 Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode	Original	LT3781 350kHz LTC1929 300kHz LT3710 LTC3728 550kHz, 3781f GHM3045 FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3	PDF
ltc 3781 Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4 Text: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode	Original	LT3781 350kHz LTC1922-1 LTC1929 300kHz LTC3728 550kHz, 3781i ltc 3781 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4	PDF
BF547 Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	BF547 MSB003 BF547 MSB003	PDF
B12 IC marking code Abstract: BF547 MSB003 Y22 SOT23 transistor y21 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm	Original	PA1710A PA1710AG	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm	Original	PA1710A PA1710AG	PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
BF747 Abstract: MBB400 sot23-4 marking a1 Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.	Original	BF747 BF747 MBB400 sot23-4 marking a1	PDF

PSH10 Abstract: MPSH10 datasheet MPSH10 MPSH81 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification	Original	M3D186 MPSH10 MSB033 MPSH81. PSH10. SCA60 125104/00/04/pp8 PSH10 MPSH10 datasheet MPSH10 MPSH81	PDF
z144 Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22 Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22	PDF
Untitled Abstract: No abstract text available Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO FEATURES U High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking	Original	LT1681 350kHz TC3714 LTC3716 1681f	PDF
planar transformer theory P1976 Abstract: planar transformer theory GHM3045X7R222K-GC 2kw boost 2-phase 2kw mosfet DO1608C-472 LT1681 MURS120T3 SUD40N10-25 VP5-1200 Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO U FEATURES High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking	Original	LT1681 350kHz LTC3714 LTC3716 1681f planar transformer theory P1976 planar transformer theory GHM3045X7R222K-GC 2kw boost 2-phase 2kw mosfet DO1608C-472 LT1681 MURS120T3 SUD40N10-25 VP5-1200	PDF
3408 diode Abstract: LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408 Text: LTC3408 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor U FEATURES DESCRIPTIO • The LTC 3408 is a high efficiency monolithic synchronous buck regulator optimized for WCDMA power amplifier applications. The output voltage can be dynamically	Original	LTC3408 600mA 600mA 300MHz LTC5505-1: 28dBm 18dBm, LTC5505-2: 32dBm 12dBm, 3408 diode LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408	PDF
CA3246M Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6 Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate	Original	CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6	PDF
AF239 Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.	OCR Scan	A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A	PDF
AFY16 Abstract: Germanium Transistor 71lb 21b22 Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22	PDF
Untitled Abstract: No abstract text available Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC30U	PDF
IRGMVC50UD Abstract: No abstract text available Text: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes	OCR Scan	IRGMVC50U 20kHz IRGMVC50UD IRGMVC50UU O-258 4ASS452 MIL-S-19500 IRGMVC50UD	PDF

TRANSISTOR G11 Search Results

TRANSISTOR G11 Result Highlights (5)

TRANSISTOR G11 Datasheets Context Search

1030mhz

Y22 SOT23

PMBTH10

MBB400

mbb400

70V AC to 48v dc 40 amp converter circuit diagram

GHM3045

ltc 3781

BF547

B12 IC marking code

Untitled

Untitled

XC6SLX16-CSG324

BF747

PSH10

z144

Untitled

planar transformer theory P1976

3408 diode

CA3246M

AF239

AFY16

Untitled

IRGMVC50UD