Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation
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ENA1120A
2SC5646A
10GHz
A1120-9/9
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2SC3927
Abstract: No abstract text available
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150
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2SC3927
100max
550min
Pulse15)
105typ
MT-100
2SC3927
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2SC3851
Abstract: 2SC3851A FM20
Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB
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2SC3851/3851A
2SA1488/A)
100max
60min
80min
to320
15typ
60typ
2SC3851
2SC3851A
FM20
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2SC3852A
Abstract: 2sc3852 FM20 3852-A DSA0016508
Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ
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2SC3852/3852A
100max
60min
80min
500min
15typ
50typ
O220F)
2SC3852
2SC3852A
2SC3852A
FM20
3852-A
DSA0016508
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2SC3851
Abstract: 2SC3851A FM20 DSA0016507
Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB
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2SC3851/3851A
2SA1488/A)
100max
60min
80min
to320
15typ
60typ
O220F)
2SC3851
2SC3851A
FM20
DSA0016507
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2SC3852A
Abstract: 2sc3852 FM20 transistor 2sc3852
Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A
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2SC3852/3852A
100max
60min
80min
500min
15typ
50typ
10max
2SC3852A
2SC3852
2SC3852A
2sc3852
FM20
transistor 2sc3852
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2sc4024
Abstract: FM20 DSA0016508
Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz
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2SC4024
O220F)
10max
50min
24typ
150typ
100x100x2
50x50x2
2sc4024
FM20
DSA0016508
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t6790
Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726
Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50
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ZDT6790
OT223)
T6790
500mA,
FZT690
-10mA,
-500mA,
-50mA,
50MHz
t6790
ZDT6790
zetex t6790
100MA 45 V NPN
ic1a
DSA003726
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C3679 equivalent
Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.
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T01EE0
H1-T01EE0-0107020SB
C3679 equivalent
transistor c3835
a1695 power transistor
SK C4020
b1686
sk c4467
c4381
SK C5071
transistor c3856 npn
C4020 TO220
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d2494
Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
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n6to4467
2SD211to214
2SC4468
2SC1828
2SC3832
2SA768to769
2SA1262
2SA770to771
2SA1725
2SA957to958
d2494
c4381
B1625 equivalent transistor
a1668 transistor
a1695 power transistor
D2495
c3852a
D1796 power transistor
c5287
D2493
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Untitled
Abstract: No abstract text available
Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device CXXYM Mechanical Data · · · · · · Case: SOT-563, Molded Plastic
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OT-563
OT-563,
J-STD-020A
MIL-STD-202,
com/datasheets/ap02007
DS30429
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10KW
Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH Transistor FT TO NPN 4V 5mA
Text: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH Pb DCX LO-R1 H Lead-free COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-563 A Built-In Biasing Resistors
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DCX122LH
DCX142JH
DCX122TH
DCX142TH
OT-563
OT-563
J-STD-020C
DS30429
10KW
22KW
DCX142TH
Transistor FT TO NPN 4V 5mA
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10KW
Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH J-STD-020A
Text: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device
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DCX122LH
DCX142JH
DCX122TH
DCX142TH
OT-563
OT-563,
J-STD-020A
MIL-STD-202,
DCX122LH
DCX142JH
10KW
22KW
DCX142TH
J-STD-020A
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20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPT1G
500mA
SC-89
463C-01
463C-02.
20M diode zener
102k1k
LDTDG12GPT1G
SC-89
transistor collector diode protection
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NPN PNP sot-563
Abstract: Surface mount NPN/PNP complementary transistor DCX122LH DCX122TH DCX142JH DCX142TH DDCX122LH DDCX142JH
Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)
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OT-563
DCX122LH
DCX142JH
DCX122TH
DCX142TH
DS30429
NPN PNP sot-563
Surface mount NPN/PNP complementary transistor
DCX122LH
DCX122TH
DCX142JH
DCX142TH
DDCX122LH
DDCX142JH
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2SC6053
Abstract: No abstract text available
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE sat .
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2SC6053
2SC6053
650mA
SC-59
O-236
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102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
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dual transistor marking code 012
Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU J-STD-020A marking code vl
Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device SOT-363 A CXX YM Dim Min Max A 0.10 0.30 B 1.15 1.35
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OT-363
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30425
150mW
dual transistor marking code 012
DCX122LU
DCX122LU-7
DCX122TU
DCX142JU
DCX142TU
J-STD-020A
marking code vl
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Y 363 transistor
Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU marking code vl transistor PNP 5 w
Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 3) CXX YM
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OT-363
OT-363
J-STD-020C
MIL-STD-202,
DS30425
150mW
Y 363 transistor
DCX122LU
DCX122LU-7
DCX122TU
DCX142JU
DCX142TU
marking code vl
transistor PNP 5 w
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DCX122LU
Abstract: DCX122LU-7-F DCX122TU DCX142JU DCX142TU
Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) CXX YM Mechanical Data
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OT-363
OT-363
J-STD-020C
MIL-STD-202,
DS30425
DCX122LU
DCX122LU-7-F
DCX122TU
DCX142JU
DCX142TU
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Untitled
Abstract: No abstract text available
Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3)
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OT-563
DCX122LH
DCX142JH
DCX122TH
DCX142TH
DS30429
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Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPWT1G
500mA
Diode marking CODE 5M
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
LDTDG12GPWT1G
LDTDG12GPWT3G
diode 50M marking code
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2sc4809
Abstract: No abstract text available
Text: Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current
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2SC4809
2sc4809
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S4 2A
Abstract: PU3117 PU4117 PU4417 Ffjp
Text: Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Package Dim ensions PU3117 Unit! m m Silicon NPN Triple-Diffused Planar Type 4.2max. 20. 5max. Power Am plifier, Switching 0.8 ~ 0.25 • Features 0 . 5 - 0.15 , ! I « i.fl .0. 23 ~ — 2.54 : . 3.2 '
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PU3117,
PU4117,
PU4417
PU3117:
PU4117:
PU4117
S4 2A
PU3117
PU4417
Ffjp
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