2SC4703-T1
Abstract: NE46234 2SC4703 2SC470-3
Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
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NE46234
2SC4703
2SC4703
OT-89)
dBV/75
PU10339EJ01V1DS
2SC4703-T1
2SC470-3
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC4093
2SC4093
S21e2
2SC4093-T1
R26 transistor
R27 transistor
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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nec 2501
Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V1DS
nec 2501
ic nec 2501
nec RF package SOT89
2501 NEC
2SC4703-T1
2SC470-3
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ic nec 2501
Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V0DS
ic nec 2501
nec 2501
2501 NEC
2SC4703-T1
2SC470-3
nec RF package SOT89
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JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
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2SC4226
R09DS0022EJ0200
2SC4226
S21e2
2SC4226-A
2SC4226-T1
JLN 2003
2SC4226 APPLICATION NOTES
newmarket transistor
2SC4226-T1
2SC4226-T1-A
2SC4226-A
Korea Electronics TRANSISTOR
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2SC5602
Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA
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2SC5602
S21e2
2SC5602-T1
2SC5602
2SC5602-T1
nec 8725
marking TW
NEC 2561
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k 319
Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Text: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar
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BFS55
BFS55
62702-F272
p21e--+
k 319
Q62702-F272
A 798 transistor
transistor H 802
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marking R33
Abstract: 2SC4227 2SC4227-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4227
2SC4227
S21e2
2SC4227-T1
marking R33
2SC4227-T1
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2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4228
S21e2
2SC4228-T1
2SC4228-T1
TRANSISTOR R44
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MARKING CODE 16 transistor sot23
Abstract: RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81
Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D
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CMPTH81
OT-23
100MHz
20-February
MARKING CODE 16 transistor sot23
RF TRANSISTOR
ic 556 datasheet
pdf for ic 556
CMPTH81
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MARKING CODE 16 transistor sot23
Abstract: CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz
Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code: C3D.
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CMPTH81
OT-23
100MHz
16-October
MARKING CODE 16 transistor sot23
CMPTH81
MARKING 16 transistor sot23
RF POWER TRANSISTOR 100MHz
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sot-23 MARKING CODE 3d
Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.
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CMPTH81
OT-23
100MHz
26-August
sot-23 MARKING CODE 3d
marking code 3d
Transistor 3D
3D sot23
MARKING CODE 16 transistor sot23
transistor Vbe
3d transistor
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030
MRF16030
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
equivalent transistor rf "30 mhz"
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16006
MRF16006
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
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Untitled
Abstract: No abstract text available
Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D
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CMPTH81
OT-23
20-February
OT-23
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3SK132
Abstract: 3SK132A si2494 g2sc ETEL
Text: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2
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3SK132A
3SK132
3SK132A
si2494
g2sc
ETEL
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Untitled
Abstract: No abstract text available
Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D
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CMPTH81
1001OV,
100MHz
20-February
OT-23
OT-23
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inductor vk200
Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF238
inductor vk200
VK200 INDUCTOR
MRF238
VK200-4B
VK200 4B inductor
vk200 rf choke
rasistor
marine radio
02CM
arco trimmer
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PDF
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si diode 1N4007
Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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MRF6414
MRF6414PHT/D
MRF6414
MRF8414
si diode 1N4007
MRF841
MOTOROLA TRANSISTOR 935
150 watts power amplifier layout
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j 6815 transistor
Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .
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RD00HVS1
175MHz
RD00HVS1
175MHz
48MAX
OT-89
j 6815 transistor
TRANSISTOR J 6815 EQUIVALENT
C 5763 transistor
transistor M 9718
5609 transistor
4082 mitsubishi
9622 transistor
4303 sot89
8948
780-4 transistor
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transistor 1971 mitsubishi
Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
0-48MAX
OT-89
25deg
TIO750
transistor 1971 mitsubishi
MOS 6520 40 pin
marking 4338 sot89
2493 transistor
i 2708
9622 transistor
MOS 6581
an 17827
MOS marking 843
Mitsubishi 3994
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