TRANSISTOR FET N-CHANNEL RF AMPLIFIER Search Results

TRANSISTOR FET N-CHANNEL RF AMPLIFIER Result Highlights (5)

Part	Manufacturer	Description
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR FET N-CHANNEL RF AMPLIFIER Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125EU AGR19125EF
100B100JW500X Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25 Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8
Untitled Abstract: No abstract text available Text: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E AGR19125E AGR19125EU AGR19125EF IS-95/97 co-712-4106) PB03-069RFPP
Untitled Abstract: No abstract text available Text: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP)
CDM 82 Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82
AGR19045XF Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045EF Hz--1990 AGR19045XF
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386
CDM 03 Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A Text: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19045EF Hz--1990 AGR19045EF carGR19045EF AGR19045XF 21045F 12-digit CDM 03 AGR19045XF CDR33BX104AKWS JESD22-C101A
"RF Power Amplifier" Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
J600 transistor Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor
AGR19030XF Abstract: 100B100JCA500X AGR19030EF JESD22-C101A Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF AGR19030XF AGR18030F 12-digit AGR19030XF 100B100JCA500X JESD22-C101A
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)

MRF255 equivalent Abstract: electrolytic capacitor 470 mrf255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	PDF	MRF255 MRF255 equivalent electrolytic capacitor 470
MRF255 equivalent Abstract: mrf255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	PDF	MRF255 MRF255 equivalent
SU 179 transistor Abstract: s227 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen	OCR Scan	PDF	MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227
sp 0937 Abstract: VK200 inductor of high frequencies Nippon capacitors Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	OCR Scan	PDF	MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors
zener diode 7c3 Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	PDF	MRF255/D 2PHX34608Q zener diode 7c3 electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
MRF966 Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier	OCR Scan	PDF	MRFG9661/D MRFG9661/9661R MRFG9661/D MRF966 MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
motorola 304 Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075 Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier	OCR Scan	PDF	MRFG9801/D MRFG9801/9801R MRFG9801/D motorola 304 MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
MRF255 equivalent Abstract: MRF255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	PDF	MRF255 MRF255 equivalent
equivalent transistor 2sk Abstract: 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk Text: Ordering number: ENN7021 \| TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET _FC21 SANYO/ High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features • T h e F C 2 l contains both a 2SK 1740 equivalent chip	OCR Scan	PDF	ENN7021 equivalent transistor 2sk 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk
Case 449-02 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable	OCR Scan	PDF	MRF9745T1 MRF9745T1 Case 449-02

Privacy Settings

TRANSISTOR FET N-CHANNEL RF AMPLIFIER Search Results

TRANSISTOR FET N-CHANNEL RF AMPLIFIER Result Highlights (5)

TRANSISTOR FET N-CHANNEL RF AMPLIFIER Datasheets Context Search

Untitled

100B100JW500X

J307 FET

Untitled

Untitled

CDM 82

AGR19045XF

J307 FET

CDM 03

"RF Power Amplifier"

J600 transistor

AGR19030XF

6603 Shenzhen

Untitled

MRF255 equivalent

MRF255 equivalent

SU 179 transistor

sp 0937

zener diode 7c3

MRF966

motorola 304

MRF255 equivalent

equivalent transistor 2sk

Case 449-02