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    TRANSISTOR F 20 NF Search Results

    TRANSISTOR F 20 NF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 20 NF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE894M13 / 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		PDF NE894M13 2SC5787 S21e2 NE894M13-A 2SC5787-A NE894M13-T3-A 2SC5787-T3-A conta160 PU10070EJ01V0DS

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356

    2sc5653

    Abstract: 2SC5653-T1 k 3767 NEC NPN 2SC5653 ZO 103 MA 75 623 ZO 107 MA 75 595 zo 109 ma
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5653 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES • 1006 package employed 1.0 x 0.6 × 0.5 mm • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • S21e2 = 10.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz


    Original     		PDF 2SC5653 S21e2 2SC5653 2SC5653-T1 k 3767 NEC NPN 2SC5653 ZO 103 MA 75 623 ZO 107 MA 75 595 zo 109 ma

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356

    transistor

    Abstract: rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION •Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS


    Original     		PDF 2SC2954 S21e2 500MHz transistor rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN

    2SC5787

    Abstract: 2SC5787-T3 CRE 6203
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		PDF 2SC5787 S21e2 2SC5787-T3 2SC5787 2SC5787-T3 CRE 6203

    2SC5787

    Abstract: transistor 4580 2SC5787-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		PDF 2SC5787 S21e2 2SC5787-T3 2SC5787 transistor 4580 2SC5787-T3

    BFR106

    Abstract: No abstract text available
    Text: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz


    Original     		PDF BFR106 500MHz 900MHz BFR106

    2SC5786

    Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		PDF 2SC5786 S21e2 2SC5786-T1 2SC5786 2SC5786-T1 marking UE marking 654 3pin nec 1299 662

    VCO 1ghz

    Abstract: TOSHIBA MICROWAVE AMPLIFIER MT3S35FS
    Text: MT3S35FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35FS VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Low Noise Figure :NF=1.4dB @f=2GHz • High Gain:|S21e| =13.0dB (@f=2GHz) 2 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 2 20 3 0.1±0.05


    Original     		PDF MT3S35FS VCO 1ghz TOSHIBA MICROWAVE AMPLIFIER MT3S35FS

    RF TRANSISTOR 1.5 GHZ

    Abstract: RF TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ transistor transistor f 20 nf 2 F transistor 4 npn transistor ic RF NPN POWER TRANSISTOR 2 GHZ RF POWER TRANSISTOR NPN RF TRANSISTOR
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFS520 DESCRIPTION •Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz


    Original     		PDF BFS520 S21e2 RF TRANSISTOR 1.5 GHZ RF TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ transistor transistor f 20 nf 2 F transistor 4 npn transistor ic RF NPN POWER TRANSISTOR 2 GHZ RF POWER TRANSISTOR NPN RF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MMBR911L Silicon NPN RF Transistor DESCRIPTION • High Gain GNF = 17 dB TYP. @ lc= 10 mA, f = 500 MHz • Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz


    Original     		PDF MMBR911L OT-23

    Untitled

    Abstract: No abstract text available
    Text: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz


    Original     		PDF MMBR920L 500MHz

    KTC3770T

    Abstract: ON Semiconductor marking J50
    Text: SEMICONDUCTOR KTC3770T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B K DIM A B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D F D G 3 1 RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		PDF KTC3770T -j250 -j150 -j100 KTC3770T ON Semiconductor marking J50

    4435 power ic

    Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type


    Original     		PDF 2SC5336 2SC3357 4435 power ic transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357

    150J10

    Abstract: 7011 NPN TRANSISTOR
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 150J10 7011 NPN TRANSISTOR

    MJE 15024

    Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 NE662M0anty MJE 15024 BF111 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884

    RF POWER TRANSISTOR NPN

    Abstract: RF TRANSISTOR 2SC4537 high power npn UHF transistor
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION •Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for VHF, UHF low noise amplifier.


    Original     		PDF 2SC4537 900MHz RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC4537 high power npn UHF transistor

    MRF914

    Abstract: No abstract text available
    Text: MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB typ @ f = 500 MHz • Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz 2 1 3 4 • High FT - 4.5 GHz (typ) @ IC = 20 mAdc


    Original     		PDF MRF914 To-72 MRF914

    MFE204

    Abstract: dual-gate
    Text: MOTOROLA SC XSTRS/R F 15E D | b3b?2S4 N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR 0001,732 5 | MFE204 , CASE 20-03, STYLE 9 TO-72 TQ-206AF . . . depletion mode dual gate transistor designed and characterized for UHF communications applications.


    OCR Scan     		PDF O-206AF MFE204 dual-gate

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic

    MRF914

    Abstract: No abstract text available
    Text: MO T O R O L A SC X S T R S / R F MbE D • b3b72Sil GQTM'iMM S ■ noTb MOTOROLA T - 3 1 - 1*5 ■ SEMICONDUCTOR TECHNICAL DATA MRF914 The E F Line fy = 4.5 GHz @ 20 mA HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for applications requiring high-gain, low-noise and


    OCR Scan     		PDF b3b72Sil MRF914 MRF914

    NA 6884

    Abstract: IC AT 6884 0200E TRANSISTOR 8808 W
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES HIGH GAIN BANDWIDTH: f r = 23 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 NA 6884 IC AT 6884 0200E TRANSISTOR 8808 W