TRANSISTOR EQUIVALENT CIRCUIT Search Results

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)

2SC5376F

Abstract: HN7G10FE SSM3K03FE 2sC537
Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

702 transistor smd code

Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

equivalent ZO 607

Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

DTA143X

Abstract: DTA143XL
Contextual Info: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications EQUIVALENT CIRCUIT 1 OUT R1 IN R2 TO-92 GND + IN OUT 1: GND 2: OUT 3: IN *Pb-free plating product number:DTA143XL

DTA143X

Abstract: DTA143XL
Contextual Info: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 1 EQUIVALENT CIRCUIT OUT R1 IN TO-92SP R2 GND + IN OUT 1: GND 2: OUT 3: IN *Pb-free plating product number:DTA143XL

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Contextual Info: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

2SC5849

Abstract: 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor ADE-208-1540 Z Rev.0 Nov. 2002 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

2SC5872

Abstract: 2SC5849 HTT1129E
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor ADE-208-1541A Z Rev.1 Jan. 2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5849

HN7G02FE

Abstract: RN2110 SSM3K03FE
Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

ADE-208-1439A

Abstract: 2SC5700 2SC5757 HTT1115E DSA003640 hitachi ic
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor ADE-208-1439A Z Rev.1 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor ADE-208-1449 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

HN7G09FE

Abstract: RN1104F SSM3K15FS
Contextual Info: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent

Power MOSFET, toshiba

Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

HN7G02FE

Abstract: RN2110 SSM3K03FE On semiconductor power MOSFET reliability report
Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent

Contextual Info: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent