Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR EAR - 3 Search Results

    TRANSISTOR EAR - 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EAR - 3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    822SD

    Abstract: 1K transistor
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & W ear NE38 0AH, England mailto:sales@isocom .uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches: Dual Transistor Output Optocouplers Catalogue Home Page 150 250 822S 822SD: Dual Transistor Output


    Original     		822SD: 822SD ILD610 1K transistor PDF

    EL series SMD transistor

    Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description


    Original     		IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299 PDF

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl PDF

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199 PDF

    sem 2005

    Abstract: P0903BI P0903b P0903 niko-sem
    Text: NIKO-SEM P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-251 Lead-Free D 3 PRODUCT SUMMARY RDS ON ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE 1 2 V(BR)DSS G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0903BI O-251 Mar-07-2005 sem 2005 P0903BI P0903b P0903 niko-sem PDF

    P0903BSG

    Abstract: P0903B P0903 Niko Semiconductor SEM 2004 TO-263 niko-sem
    Text: P0903BSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0903BSG O-263 Temperat2004 Jun-29-2004 P0903BSG P0903B P0903 Niko Semiconductor SEM 2004 TO-263 niko-sem PDF

    P0903BDG

    Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0903BDG O-252 Temperature2004 SEP-24-2004 P0903BDG p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg PDF

    P1203BS

    Abstract: P1203B
    Text: P1203BS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P1203BS O-263 FEB-02-2004 P1203BS P1203B PDF

    SEM 2004

    Abstract: P3055LLG
    Text: P3055LLG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-223 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 90mΩ 6A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P3055LLG OT-223 NOV-05-2004 OT-223 SEM 2004 P3055LLG PDF

    P3057LDG

    Abstract: dpak code p3057 P3057LD sm 17 35 tc
    Text: P3057LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P3057LDG O-252 Tst2004 AUG-17-2004 P3057LDG dpak code p3057 P3057LD sm 17 35 tc PDF

    P3056LD

    Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
    Text: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P3056LD O-252 P3056LD" FEB-04-Y02 P3056LD DIODE P3056LD niko P3056LD p3056LD NIKO PDF

    nikos

    Abstract: P75N02LTG p75n02
    Text: P75N02LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P75N02LTG O-220 Sep-09-2004 nikos P75N02LTG p75n02 PDF

    SEM 2006

    Abstract: P0808ATG transistor vds rds 12 id 80a to220
    Text: P0808ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 8mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0808ATG O-220 Sep-20-2006 SEM 2006 P0808ATG transistor vds rds 12 id 80a to220 PDF

    SEM 2006

    Abstract: P1308ATG transistor sem 2006
    Text: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P1308ATG O-220 Jun-09-2006 SEM 2006 P1308ATG transistor sem 2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications.


    OCR Scan     		ttiS3T31 D01SQ31 LZ1418E100R T-33-H PDF

    ECA 324

    Abstract: No abstract text available
    Text: 19-0485; Rev 0; 4/96 J V IS ÌX A J V V D ual9 Low -Dropout, 100m A L in ear R egulators The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the “T" versions, 2.84V for the “S” versions, or 2.80V for the “R” versions


    OCR Scan     		MAX8865 MAX8866 100mA. 200mA 145pA, MAX8865/MAX8866 400Hz. 100kHz, ECA 324 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1117; Rev 0; 8/96 V M / X IA I Low -C ost, Low-Dropout, D ual L in ear R eg u lato r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from +2V to +11V with external resistors. The input


    OCR Scan     		MAX8862 250mA 100mA, 160mV. 200mV 100kHz. PDF

    SP SOT23-5

    Abstract: No abstract text available
    Text: 19-0466; Rev O; 3/96 jy \jí7 L \jy \ Low-Dropout, 100mA Linear R egulators _ General Description The MAX8863T/S/R and MAX8864T/S/R low-dropout lin­ ear regulators operate from a +2.5V to +5.5V input range and deliver up to 100mA. A PMOS pass transis­


    OCR Scan     		100mA MAX8863T/S/R MAX8864T/S/R 100mA. MAX8863/MAX8864 350pVRMS MAX8863T/S/R, SP SOT23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-0485; Rev O; 4/96 Dual, Low-Dropout, 100mA L in ear R egulators _ F ea tu res ♦ Low Cost The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the "T" versions, 2.84V for the "S" versions, or 2.80V for the "R" versions


    OCR Scan     		100mA DD12731 MAX8865T/S/R, X8866T/S/R PDF

    t 3866 transistor equivalent transistor

    Abstract: ML4868E lt 7245
    Text: December 1994 PRELIMINARY % ,M ic r o L in e a r ML4868 High Frequency, Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4868 is a high frequency boost regulator designed for DC to DC conversion in 2 to 3 cell battery powered systems. The maximum switching frequency can exceed


    OCR Scan     		ML4868 ML4868 150kHz, ML4868CS-3 ML4868CS-5 ML4868ES-3 ML4868ES-5 L4868IS-3 L4868IS-5 t 3866 transistor equivalent transistor ML4868E lt 7245 PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1996 MgL Micro Linear ML4961 Adjustable Output Low Voltage Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The ML4961 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal


    OCR Scan     		ML4961 ML4961 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPC8201 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8201 INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 37mO (Typ.) High Forward Transfer Admittance: |Yfs|=6S (Typ.)


    OCR Scan     		TPC8201 10//A PDF

    kef 842

    Abstract: 228A2 ML4861
    Text: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,


    OCR Scan     		ML4861 ML4861 kef 842 228A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1996 « iL Micro Linear ~ ARV ML65T541 3.3V High Speed Octal Buffer/Line Driver GENERAL DESCRIPTION FEATURES The ML65T541 is a non-inverting octal buffer/line driver. The high operating frequency 66M Hz driving a 50pF load and low propagation delay (2ns) make it ideal for


    OCR Scan     		ML65T541 ML65T541 PDF