TRANSISTOR E 13005 Search Results

TRANSISTOR E 13005 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR E 13005 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	13005EC QW-R213-022
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	13005EC QW-R213-022
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	13005EC QW-R213-022
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	13005BA QW-R201-089
13005 TRANSISTOR Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte Text: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range	Original	PDF	O--220 100TYP 540TYP 13005 TRANSISTOR 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	13005BA QW-R201-089
13005a Abstract: transistor 13005a 13005A TRANSISTOR IC2A 3dd13005a H424-31 H214 3DD13005 A1 transistor Text: NPN 广州金永利电子有限公司 SILICON 对应国外型号 3DD13005A 13005A A1 █ 主要用途 TRANSISTOR █ 外形图及引脚排列高压快速开关 █ 极限值（Ta=25℃） TO-220 T stg ——贮存温度………………………………… -55~150℃	Original	PDF	3DD13005A 3005A O-220 H110--16 H214--21 H319--26 H424--31 H529--40 13005a transistor 13005a 13005A TRANSISTOR IC2A 3dd13005a H424-31 H214 3DD13005 A1 transistor
transistor 13005 Abstract: KSE13005 D283AG-00 transistor E 13005 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D283AG-00 芯片厚度：240±20µm 管芯尺寸：2830x2830µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2	Original	PDF	100mm D283AG-00 KSE13005HE13005 O-220 10mAIB 10VIC 125VIC transistor 13005 KSE13005 D283AG-00 transistor E 13005
transistor 13005 Abstract: KSE13005HE13005 D260AG-00 KSE13005 10VIC Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D260AG-00 芯片厚度：240±20µm 管芯尺寸：2600x2600µm 2 焊位尺寸：B 极 366×540µm 2，E 极 292×560µm 2	Original	PDF	100mm D260AG-00 KSE13005HE13005 O-220 10mAIB 10VIC 125VIC transistor 13005 KSE13005HE13005 D260AG-00 KSE13005
E13005 Abstract: e13005 2 transistor E13005 E13005 fairchild E13005 transistor e13005- 2 E13005 -2 npn silicon transistor 13005 application note 13005 datasheet E13005 transistor Text: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	KSE13004/13005 O-220 KSE13004 KSE13005 KSE1300er E13005 e13005 2 transistor E13005 E13005 fairchild E13005 transistor e13005- 2 E13005 -2 npn silicon transistor 13005 application note 13005 datasheet E13005 transistor
13005 2 transistor Abstract: EB 13005 transistor 13005 E13005 EN 13005 transistor E 13005 13005 TRANSISTOR 13005 NPN Transistor PC 13005 TRANSISTOR EN 13005 2 Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e : KSE13004 : K S E 13005	OCR Scan	PDF	KSE13004/13005 O-220 KSE13004 KSE13005 13005 2 transistor EB 13005 transistor 13005 E13005 EN 13005 transistor E 13005 13005 TRANSISTOR 13005 NPN Transistor PC 13005 TRANSISTOR EN 13005 2
13005 2 transistor Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2 Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage	OCR Scan	PDF	KSE13004/13005 KSE13005 KSE13004 13005 2 transistor transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
E13005D Abstract: transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13004D 13005D TRANSISTOR TR 13005D w 13005d Text: TE13004D • TE13005D Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in teg r a ted C - E -f r e e -w h e e l d io d e • H IG H S P E E D te c h n o lo g y • P la n a r p a ssiv a tio n •	OCR Scan	PDF	TE13004D TE13005D 13004D E13005D transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13005D TRANSISTOR TR 13005D w 13005d
transistor 13005D Abstract: LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D Text: Te m ic TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in te g ra te d C -E -fre e -w h e e l d io d e V ery low sw itch in g losses • H IG H S P E E D te c h n o lo g y V ery low d y n a m ic satu ratio n	OCR Scan	PDF	TD13004D TD13005D 13005D transistor 13005D LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D

Transistors 13005 D Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use	OCR Scan	PDF	tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
13005 2 transistor Abstract: transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005 Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • H igh S p eed Sw itching • Suitable for Sw itching Regulator and M otor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C o lle cto r Base Voltage : K S E 13004	OCR Scan	PDF	KSE13004/13005 O-220 KSE13004 13005 2 transistor transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005
transistor Electronic ballast 13005 Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005 Text: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times	OCR Scan	PDF	TD13004 TD13005 TD13005 TD13004 TD13005Fast transistor Electronic ballast 13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
in 3003 TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc Text: 0182998 A C R I AN INC T? DE \| D l f l E T T f l 0GDm ?S 7 \|~D ^ - ^ - 0 7 W p i ti ü B S G E N ER A L isssbss 3003 D ESC R IPT IO N 3 W ATTS - 28 V O LTS 3000 MHz The 3003 is a common base transistor capable of providing 3 watts of C W R F output power at 3000	OCR Scan	PDF	10nfd@ in 3003 TRANSISTOR acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	PDF	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
13005 2 transistor Abstract: EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005 Text: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable lor Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage: KSE13004	OCR Scan	PDF	KSE13004/13005 KSE13004 KSE13005 13005 2 transistor EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005
EB 13005 Abstract: transistor 13005 CIRCUIT Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Sym bol : KSE13004 Rating VcBO : KSE13005	OCR Scan	PDF	KSE13004/13005 KSE13004 KSE13005 EB 13005 transistor 13005 CIRCUIT
SC-0351 Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005 Text: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR	OCR Scan	PDF	O-220 ST13005 SC-0351 SC-0351 ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005
Untitled Abstract: No abstract text available Text: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED	OCR Scan	PDF	O-251) MJD13005 MJD13005 0068771-E
13005 2 transistor Abstract: 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A Text: r c G o n ia 7 i D EV ELO PM EN T DATA T his data sheet contains advance information and MJE 13004 MJE 13005 specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 25E D -T -S 3 -J 3 * SILICON DIFFU SED PO W ER T R A N SIST O R S High-voltage, high-speed glass passivated npn power transistor in a T 0 -2 2 0 envelope intended for use	OCR Scan	PDF	T-53-I3 T0-220 O-220AB. june1988 S3T31 T-33-73 200/iH 13005 2 transistor 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A

TRANSISTOR E 13005 Search Results

TRANSISTOR E 13005 Result Highlights (5)

TRANSISTOR E 13005 Datasheets Context Search

Untitled

Untitled

Untitled

Untitled

13005 TRANSISTOR

Untitled

13005a

transistor 13005

transistor 13005

E13005

13005 2 transistor

13005 2 transistor

E13005D

transistor 13005D

Transistors 13005 D

13005 2 transistor

transistor Electronic ballast 13005

in 3003 TRANSISTOR

e13009

13005 2 transistor

EB 13005

SC-0351

Untitled

13005 2 transistor