TRANSISTOR DV1 Search Results

2SD596A

Abstract: transistor DV3 D1788 2SB624
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)

2SD596

Abstract: transistor dv4 2SB624
Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA

2SD596 dv3

Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA

transistor DV3

Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.

2SD596

Abstract: D1298 SSA250 transistor dv4
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.

D 596

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SD 596 ELECTRON DEVICE / AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD D E S C R IP TIO N PACKAG E D IM E N S IO N S The 2S D 596 is designed fo r use in small type equipm ents especially recom ­

GL8905

Contextual Info: GL8905 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOSTRANSISTORS Descriqtion Pin Configuration The GL8905 controls the MOS power transistor and performs all necessary regulation and monitoring functions in free running flyback converters. Since good

2SD596

Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

v3h diode

Abstract: TDA 4605-3 4605-3 6-pin smps power control ic mostransistor
Contextual Info: Control IC for Switched-Mode Power Supplies using MOS-Transistor TDA 4605-3 Bipolar IC Features ● Fold-back characteristics provides overload protection for ● ● ● ● ● ● ● ● external components Burst operation under secondary short-circuit condition

transistor dv4

Abstract: 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

TDA 4605-3

Abstract: 6-pin smps power control ic rectifier V3H v3h diode Q67000-A5066
Contextual Info: Control IC for Switched-Mode Power Supplies using MOS-Transistor TDA 4605-3 Bipolar IC Features ● Fold-back characteristics provides overload protection for ● ● ● ● ● ● ● ● external components Burst operation under secondary short-circuit condition

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

transistor dv4

Abstract: transistor DV3 2SD596 DV4 sot23
Contextual Info: 2SD596 SOT-23 Transistor NPN SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SD596

Abstract: 2S8624 2S0806
Contextual Info: 2SD596.2SD596R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2S8624, 2SB624R PACKAGE DIMENSIONS • High DC Current Gain: h FE - 200 TYP. <VCE-1 .0 V , l c - 100mA in m illim a ttrt inches) ¿5 g) (0.098) 0.5 '% îl (0 02)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.7 A ICM: Collector-base voltage

transistor dv4

Abstract: 2SD596 10MHZ 2SB624
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor dv4

Abstract: transistor DV3 2SD596 SOT23-3L
Contextual Info: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

SEIKO

Abstract: cmos SENSOR 15um 8 pin IC 1038 ic 0808 pin diagram PHOTO SCS seiko 64 s chip
Contextual Info: S-8603AWI rev.1.01 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR

The S-8603AWI is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64dots photo-transistor array and a CMOS scanning circuit.